Dynamics of Electronic and Ionic Charges in Cyanine Organic Semiconductor Devices
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
The effects of background n- and p-type doping on Zn diffusion in GaAs/AlGaAs multilayered structures are investigated by secondary-ion-mass spectrometry and photoluminescence measurements. Zn diffusions are performed at 575 degrees C into Si-doped, Be-dop ...
GaN grown by three different methods (MOVPE, GSMBE and HVPE) have been studied using temperature (T) dependent reflectivity and photoluminescence (PL). Both non intentionally doped (MOVPE, GSMBE and HVPE), n- and p-doped samples (MOVPE and GSMBE) have been ...
We propose a method for the quantitative evaluation of electron-beam-induced current profiles measured in normal-collector geometry across p-n junctions in GaAs/Al0.4Ga0.6As heterostructures. We obtain a theoretical expression, valid for all distances from ...
Theor. models for the action spectrum and the current-voltage characteristics of microporous (colloidal) semiconductor films in photoelectrochem. cells were derived. The derivation is based on the assumptions that the charge carrier transport in the semico ...
Soft x-ray photoemission spectroscopy measurements reveal strong differences in chemical bonding and diffusion between II–VI and III–V compound semiconductor-metal interfaces which provide a chemical basis for their systematic differences in Schottky barri ...
The conduction band offset in ZnSe/GaAs n-p heterodiodes was determined from measurements of the low-temperature tunneling current of photoinjected carriers, We found widely different discontinuities for heterojunctions fabricated with different Zn/Se flux ...
The observation of a wedge-shaped semiconductor specimen by transmission electron microscopy (WTEM) is an interesting alternative to conventional TEM. Information on chemical composition, layer thickness down to atomic resolution, spatial extension of the ...
We tried to apply the mechanism of surface photovoltage (SPV) to a particular class of semiconductor heterojunctions, those having staggered gaps, with the aim of photoinducing charges of opposite sign at the interface notches and of creating a dipole that ...
The heat pretreatment of Ni at 500-700 Deg gives a nonstoichiometric Ni oxide which shows metallic cond. and low activity for O evolution; at higher temps. (>700 Deg), a nonconducting NiO (p-type semiconductor) is formed. [on SciFinder (R)] ...
During the past year, the broad tunability (1-10 mum) and megawatt peak intensity made available by the Vanderbilt Free-Electron Laser opened new and productive avenues to semiconductor research. This paper overviews three of these experimental areas: nonl ...