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A bipolar resistive switching device including an electrically conductive bottom electrode, a stack of transition metal oxides layers, a number of transition metal oxide layers being equal or greater than 2, the stack including: at least one MOx layer, at least one oxygen gettering layer NOy, wherein the resistive switching device further includes an electrically conductive top electrode.
Raffaella Buonsanti, Anna Loiudice, Krishna Kumar, Ona Segura Lecina, Petru Pasquale Albertini, Philippe Benjamin Green, Coline Marie Agathe Boulanger, Jari Leemans, Mark Adrian Newton
Mihai Adrian Ionescu, Shokoofeh Sheibani