Publication

Group iii nitride light-emitting devices having a polarization-doped region

Jean-François Carlin
2006
Patent

Abstract

A light-emitting device comprising a substrate-supported Group III nitride semiconductor region having a p-n junction region for injecting carriers into an optically active region, wherein the p-n junction region comprises an aluminum indium gallium nitride region which is compositionally graded for polarization doping.

Official source

https://infoscience.epfl.ch/record/229057?ln=en

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Group iii nitride light-emitting devices having a polarization-doped region

Graph Chatbot

Chat with Graph Search

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

GaN vertical power devices on silicon substrates

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

GaN vertical power devices on silicon substrates

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same