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Scaling of semiconductor devices has pushed CMOS devices close to fundamental limits. The remarkable success story of Moore's law during the last 40 years, predicting the evolution of electronic device performances related to miniaturization, has always be ...
The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...
Micro-electromechanical (MEM) laterally vibrating square resonators and beams, fabricated via a prototyping technology combining FIB-micromachined gaps with conventional UV lithography in 1.35 mu m thick SOI are presented. Resonators with both capacitive a ...
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The IGBT transistor, associating the conduction advantages of the bipolar transistor and the switching advantages of the MOSFET transistor, is widely used in medium and high power applications with an operating voltage of 1.2kV to 4.5kV. New topologies, re ...
We present a complete top-down design of a low-power multi-channel clock recovery circuit based on gated current-controlled oscillators. The flow includes several tools and methods used to specify block constraints, to design and verify the topology down t ...
A semiconductor device, such as a memory device or radiation detector, is disclosed, in which data storage cells are formed on a substrate. Each of the data storage cells includes a field effect transistor having a source, drain, and gate, and a body arran ...
We present a complete top-down design of a low-power multi-channel clock recovery circuit based on gated current-controlled oscillators. The flow includes several tools and methods used to specify block constraints, to design and verify the topology down t ...
Wireless communication systems and handset devices are showing a rapid growth in consumer and military applications. Applications using wireless communication standards such as personal connectivity devices (Bluetooth), mobile systems (GSM, UMTS, WCDMA) an ...
We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element. Modulation depth >90% can be obtained in 12.5 μm long devices. ...
This work aims at a better understanding of transport mechanisms which take place in organic semiconductors such as pentacene. More accurately, we believe that the electronic polarization plays a leading part, which we try to identify in the particular cas ...