Publications related to Radiation and Internal Loss Engineering of High-Stress Silicon Nitride Nanobeams

Ultralow Dissipation Mechanical Resonators for Quantum Optomechanics

Tobias Kippenberg, Alberto Beccari, Dalziel Joseph Wilson, Nils Johan Engelsen, Sergey Fedorov, Ryan Daniel Schilling, Amir Hossein Ghadimi

We demonstrate dissipation dilution engineering techniques for ultralow dissipation mechanical resonators. The Si3N4 nanobeams show quality factors (Q) as high as 800 million and Q x f exceeding 10(15) Hz-both records at room temperature. (C) 2019 The Auth ...

IEEE2019

Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers, Louis Hutin

In this paper a commercial 28 nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and interface traps on this technology starting from the fundamental device-phys ...

2018

Ultra-coherent nano-mechanical resonators for quantum optomechanics at room temperature

Amir Hossein Ghadimi

Mechanical oscillators are among the most important scientific tools in the modern physics. From the pioneering experiments in 18th by founding fathers of modern physics such as Newton, Hooke and Cavendish to the ground braking experiments in the 21th cent ...

EPFL2018

The impact of classical control electronics on qubit fidelity

Edoardo Charbon, Fabio Sebastiano

Quantum processors rely on classical electronic controllers to manipulate and read out the quantum state. As the performance of the quantum processor improves, non-idealities in the classical controller can become the performance bottleneck for the whole q ...

2018

PCB and circuit design for piezoelectric-NEMS characterization

Nanoelectromechanical resonators (NEMS) are being developed from more than two decades from now. The fabrication techniques as well as metrology ones are constantly improving, allowing a possible democratization of their uses in the consumer and industrial ...

2017

Quantum information density scaling and qubit operation time constraints of CMOS silicon-based quantum computer architectures

Edoardo Charbon, Fabio Sebastiano

Even the quantum simulation of an apparently simple molecule such as Fe2S2 requires a considerable number of qubits of the order of 106, while more complex molecules such as alanine (C3H7NO2) require about a hundred times more. In order to assess such a mu ...

2017

Dissipation engineering of high-stress silicon nitride nanobeams

Tobias Kippenberg, Dalziel Joseph Wilson, Amir Hossein Ghadimi

High-stress Si

_3

N

_4

nanoresonators have become an attractive choice for electro- and optomechanical devices. Membrane resonators can achieve quality factor (

Q

) - frequency (

f

) products exceeding

10^{13}

Hz, enabling (in principle) quantum coheren ...

2016

Accelerated path integral methods for atomistic simulations at ultra-low temperatures

Michele Ceriotti, Felix Uhl

Path integral methods provide a rigorous and systematically convergent framework to include the quantum mechanical nature of atomic nuclei in the evaluation of the equilibrium properties of molecules, liquids, or solids at finite temperature. Such nuclear ...

American Institute of Physics2016

Quantum limits on measurement and control of a mechanical oscillator

Vivishek Sudhir

The precision measurement of position has a long-standing tradition in physics. Cavendish's verification of the universal law of gravitation using a torsion pendulum, Perrin's confirmation of the atomic hypothesis via the precise measurement of the Brownia ...

EPFL2016

Bosonic lasing and trapping of a dressed photon fluid in InGaN at room temperature

Munise Nevin Cobet

The generation of a quantum fluid of dressed photons at room temperature is experimentally demonstrated in an InGaN microcavity which is divided into two-and one-dimensional sections, resulting in single- and switchable multilevel coherent light emission. ...

Amer Physical Soc2016

Radiation and Internal Loss Engineering of High-Stress Silicon Nitride Nanobeams

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Ultralow Dissipation Mechanical Resonators for Quantum Optomechanics

Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing

Ultra-coherent nano-mechanical resonators for quantum optomechanics at room temperature

The impact of classical control electronics on qubit fidelity

PCB and circuit design for piezoelectric-NEMS characterization

Quantum information density scaling and qubit operation time constraints of CMOS silicon-based quantum computer architectures

Dissipation engineering of high-stress silicon nitride nanobeams

Accelerated path integral methods for atomistic simulations at ultra-low temperatures

Quantum limits on measurement and control of a mechanical oscillator

Bosonic lasing and trapping of a dressed photon fluid in InGaN at room temperature

Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing

PCB and circuit design for piezoelectric-NEMS characterization

Quantum information density scaling and qubit operation time constraints of CMOS silicon-based quantum computer architectures

Ultra-coherent nano-mechanical resonators for quantum optomechanics at room temperature

Accelerated path integral methods for atomistic simulations at ultra-low temperatures

The impact of classical control electronics on qubit fidelity

Dissipation engineering of high-stress silicon nitride nanobeams

Bosonic lasing and trapping of a dressed photon fluid in InGaN at room temperature

Quantum limits on measurement and control of a mechanical oscillator

Ultralow Dissipation Mechanical Resonators for Quantum Optomechanics