Current–voltage characteristicA current–voltage characteristic or I–V curve (current–voltage curve) is a relationship, typically represented as a chart or graph, between the electric current through a circuit, device, or material, and the corresponding voltage, or potential difference, across it. In electronics, the relationship between the direct current (DC) through an electronic device and the DC voltage across its terminals is called a current–voltage characteristic of the device.
P–n junctionA p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electric current to pass through the junction only in one direction.
Gallium nitrideGallium nitride () is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling.
Diode logicDiode logic (or diode-resistor logic) constructs AND and OR logic gates with diodes and resistors. An active device (vacuum tubes in early computers, then transistors in diode–transistor logic) is additionally required to provide logical inversion (NOT) for functional completeness and amplification for voltage level restoration, which diode logic alone can't provide. Since voltage levels weaken with each diode logic stage, multiple stages can't easily be cascaded, limiting diode logic's usefulness.
TransistorA transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.
VaristorA varistor (a.k.a. voltage-dependent resistor (VDR)) is a surge protecting electronic component with an electrical resistance that varies with the applied voltage. It has a nonlinear, non-ohmic current–voltage characteristic that is similar to that of a diode. Unlike a diode however, it has the same characteristic for both directions of traversing current. Traditionally, varistors were indeed constructed by connecting two rectifiers, such as the copper-oxide or germanium-oxide rectifier in antiparallel configuration.
High-electron-mobility transistorA high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.
Wide-bandgap semiconductorWide-bandgap semiconductors (also known as WBG semiconductors or WBGSs) are semiconductor materials which have a larger band gap than conventional semiconductors. Conventional semiconductors like silicon have a bandgap in the range of 0.6 – 1.5 electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range above 2 eV. Generally, wide-bandgap semiconductors have electronic properties which fall in between those of conventional semiconductors and insulators.
TriodeA triode is an electronic amplifying vacuum tube (or thermionic valve in British English) consisting of three electrodes inside an evacuated glass envelope: a heated filament or cathode, a grid, and a plate (anode). Developed from Lee De Forest's 1906 Audion, a partial vacuum tube that added a grid electrode to the thermionic diode (Fleming valve), the triode was the first practical electronic amplifier and the ancestor of other types of vacuum tubes such as the tetrode and pentode.
