Dynamic random-access memoryDynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1.
TemperatureTemperature is a physical quantity that expresses quantitatively the perceptions of hotness and coldness. Temperature is measured with a thermometer. Thermometers are calibrated in various temperature scales that historically have relied on various reference points and thermometric substances for definition. The most common scales are the Celsius scale with the unit symbol °C (formerly called centigrade), the Fahrenheit scale (°F), and the Kelvin scale (K), the latter being used predominantly for scientific purposes.
Programmable logic arrayA programmable logic array (PLA) is a kind of programmable logic device used to implement combinational logic circuits. The PLA has a set of programmable AND gate planes, which link to a set of programmable OR gate planes, which can then be conditionally complemented to produce an output. It has 2N AND gates for N input variables, and for M outputs from PLA, there should be M OR gates, each with programmable inputs from all of the AND gates. This layout allows for many logic functions to be synthesized in the sum of products canonical forms.
Programmable Array LogicProgrammable Array Logic (PAL) is a family of programmable logic device semiconductors used to implement logic functions in digital circuits introduced by Monolithic Memories, Inc. (MMI) in March 1978. MMI obtained a registered trademark on the term PAL for use in "Programmable Semiconductor Logic Circuits". The trademark is currently held by Lattice Semiconductor. PAL devices consisted of a small PROM (programmable read-only memory) core and additional output logic used to implement particular desired logic functions with few components.
Nuclear magnetic resonance quantum computerNuclear magnetic resonance quantum computing (NMRQC) is one of the several proposed approaches for constructing a quantum computer, that uses the spin states of nuclei within molecules as qubits. The quantum states are probed through the nuclear magnetic resonances, allowing the system to be implemented as a variation of nuclear magnetic resonance spectroscopy. NMR differs from other implementations of quantum computers in that it uses an ensemble of systems, in this case molecules, rather than a single pure state.
Programmable logic deviceA programmable logic device (PLD) is an electronic component used to build reconfigurable digital circuits. Unlike digital logic constructed using discrete logic gates with fixed functions, a PLD has an undefined function at the time of manufacture. Before the PLD can be used in a circuit it must be programmed to implement the desired function. Compared to fixed logic devices, programmable logic devices simplify the design of complex logic and may offer superior performance.
Flux qubitIn quantum computing, more specifically in superconducting quantum computing, flux qubits (also known as persistent current qubits) are micrometer sized loops of superconducting metal that is interrupted by a number of Josephson junctions. These devices function as quantum bits. The flux qubit was first proposed by Terry P. Orlando et al. at MIT in 1999 and fabricated shortly thereafter. During fabrication, the Josephson junction parameters are engineered so that a persistent current will flow continuously when an external magnetic flux is applied.
Flash memoryFlash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.
Static random-access memoryStatic random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The term static differentiates SRAM from DRAM (dynamic random-access memory) — SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed.
Synchronous dynamic random-access memorySynchronous dynamic random-access memory (synchronous dynamic RAM or SDRAM) is any DRAM where the operation of its external pin interface is coordinated by an externally supplied clock signal. DRAM integrated circuits (ICs) produced from the early 1970s to early 1990s used an asynchronous interface, in which input control signals have a direct effect on internal functions only delayed by the trip across its semiconductor pathways. SDRAM has a synchronous interface, whereby changes on control inputs are recognised after a rising edge of its clock input.
