Avalanche photodiodeAn avalanche photodiode (APD) is a highly sensitive semiconductor photodiode detector that exploits the photoelectric effect to convert light into electricity. From a functional standpoint, they can be regarded as the semiconductor analog of photomultiplier tubes. The avalanche photodiode (APD) was invented by Japanese engineer Jun-ichi Nishizawa in 1952. However, study of avalanche breakdown, microplasma defects in silicon and germanium and the investigation of optical detection using p-n junctions predate this patent.
Non-ionizing radiationNon-ionizing (or non-ionising) radiation refers to any type of electromagnetic radiation that does not carry enough energy per quantum (photon energy) to ionize atoms or molecules—that is, to completely remove an electron from an atom or molecule. Instead of producing charged ions when passing through matter, non-ionizing electromagnetic radiation has sufficient energy only for excitation (the movement of an electron to a higher energy state). Non-ionizing radiation is not a significant health risk.
Electrical breakdownIn electronics, electrical breakdown or dielectric breakdown is a process that occurs when an electrically insulating material (a dielectric), subjected to a high enough voltage, suddenly becomes a conductor and current flows through it. All insulating materials undergo breakdown when the electric field caused by an applied voltage exceeds the material's dielectric strength. The voltage at which a given insulating object becomes conductive is called its breakdown voltage and, in addition to its dielectric strength, depends on its size and shape, and the location on the object at which the voltage is applied.
CMOSComplementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", siːmɑːs, -ɒs) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits.
Paschen's lawPaschen's law is an equation that gives the breakdown voltage, that is, the voltage necessary to start a discharge or electric arc, between two electrodes in a gas as a function of pressure and gap length. It is named after Friedrich Paschen who discovered it empirically in 1889. Paschen studied the breakdown voltage of various gases between parallel metal plates as the gas pressure and gap distance were varied: With a constant gap length, the voltage necessary to arc across the gap decreased as the pressure was reduced and then increased gradually, exceeding its original value.
RadiationIn physics, radiation is the emission or transmission of energy in the form of waves or particles through space or through a material medium. This includes: electromagnetic radiation, such as radio waves, microwaves, infrared, visible light, ultraviolet, x-rays, and gamma radiation (γ) particle radiation, such as alpha radiation (α), beta radiation (β), proton radiation and neutron radiation (particles of non-zero rest energy) acoustic radiation, such as ultrasound, sound, and seismic waves (dependent on a physical transmission medium) gravitational radiation, that takes the form of gravitational waves, or ripples in the curvature of spacetime Radiation is often categorized as either ionizing or non-ionizing depending on the energy of the radiated particles.
Photon countingPhoton counting is a technique in which individual photons are counted using a single-photon detector (SPD). A single-photon detector emits a pulse of signal for each detected photon. The counting efficiency is determined by the quantum efficiency and the system's electronic losses. Many photodetectors can be configured to detect individual photons, each with relative advantages and disadvantages. Common types include photomultipliers, geiger counters, single-photon avalanche diodes, superconducting nanowire single-photon detectors, transition edge sensors, and scintillation counters.
PhotodiodeA photodiode is a light-sensitive semiconductor diode. It produces current when it absorbs photons. The package of a photodiode allows light (or infrared or ultraviolet radiation, or X-rays) to reach the sensitive part of the device. The package may include lenses or optical filters. Devices designed for use specially as a photodiode use a PIN junction rather than a p–n junction, to increase the speed of response. Photodiodes usually have a slower response time as their surface area increases.
Active-pixel sensorAn active-pixel sensor (APS) is an , which was invented by Peter J.W. Noble in 1968, where each pixel sensor unit cell has a photodetector (typically a pinned photodiode) and one or more active transistors. In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as amplifiers. There are different types of APS, including the early NMOS APS and the now much more common complementary MOS (CMOS) APS, also known as the CMOS sensor.
BiCMOSBipolar CMOS (BiCMOS) is a semiconductor technology that integrates two semiconductor technologies, those of the bipolar junction transistor and the CMOS (complementary metal–oxide–semiconductor) logic gate, into a single integrated circuit. In more recent times the bipolar processes have been extended to include high mobility devices using silicon–germanium junctions.
