A Gradient-Gated SPAD Array for Non-Line-of-Sight Imaging

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Large-Format Time-Gated SPAD Cameras for Real-Time Phasor-Based FLIM

Fluorescence lifetime imaging microscopy (FLIM) is an imaging modality often used to monitor biochemical properties of a cell or a tissue. In addition to conventional fluorescence microscopy features, such as selective labeling and non-invasiveness, FLIM e ...

EPFL2021

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Catherine Erine, Minghua Zhu, Pirouz Sohi, Mohammad Samizadeh Nikooytabalvandani

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...

Institute of Electrical and Electronics Engineers2021

Superluminal Motion-Assisted Four-Dimensional Light-in-Flight Imaging

Edoardo Charbon, Andrei Ardelean, Ming-Lo Wu, Kazuhiro Morimoto

Advances in high-speed imaging techniques have opened new possibilities for capturing ultrafast phenomena such as light propagation in air or through media. Capturing light in flight in three-dimensional xyt space has been reported based on various types o ...

American Physical Society2021

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Minghua Zhu

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

EPFL2021

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

Active-Device Losses in Resonant Power Converters: A Case Study with Class-E Inverters

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Jessy Anthony Ançay

Recent research has reported an undesirable OFF-state loss in high-frequency soft-switching power converters, such as resonant converters. This loss is attributed to a hysteresis loss related to the charging-discharging process of the output capacitance of ...

IEEE2021

Lifelong Machine Learning with Data Efficiency and Knowledge Retention

Fei Mi

Artificial intelligence (AI) and machine learning (ML) have become de facto tools in many real-life applications to offer a wide range of benefits for individuals and our society. A classic ML model is typically trained with a large-scale static dataset in ...

EPFL2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Megapixel SPAD cameras for time-resolved applications

Kazuhiro Morimoto

Progress in optics technology has enriched our daily lives in many ways. Various types of single-photon detector technologies have emerged in the last century. Among these, single-photon avalanche diode (SPAD) technology outperforms other detectors for its ...

EPFL2020

Multispectral image sensor and method for fabrication of an image sensor

Assim Boukhayma

The present invention relates to a multispectral image sensor having a pixel array for detecting images with light components in different wavelength ranges, comprising a plurality of imaging layers each embedded in a semiconductor substrate, wherein in ea ...

2020

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Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

AMER INST PHYSICS2021