Tuning adatom mobility and nanoscale segregation by twin formation and polytypism
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Semiconductor nanowires are an emerging class of nanostructures that represent attractive building blocks for nanoscale electronic and photonic devices. To the present, nanowires are synthesized on a small scale by experimentally demanding gas phase deposi ...
A detailed investigation and characterization of the local properties of individual nanoscopic structures is of great importance for the understanding of novel physical phenomena at the nanoscale as well as for the assessment of their possible use in futur ...
For more than fifteen years, III-nitrides have become the materials of choice for the realization of optoelectronics devices operating in the visible-UV spectral range. Yet, while nitride-based technology has truly exploded, the structural quality of this ...
Organic semiconductors are promising materials for future electronic and electroluminescence applications. A detailed understanding of organic layers and nano-sized crystals down to single molecules can address fundamental questions of contacting organic s ...
Colloidal quantum dot (CQD) photovoltaics combine low-cost solution processability with quantum size-effect tunability to match absorption with the solar spectrum. Rapid recent advances in CQD photovoltaics have led to impressive 3.6% AM1.5 solar power con ...
In recent years, the fabrication of novel ultrathin film systems featuring multi-functionalities has been extensively studied due to their potential applications in photonics, sensors and solar cells. In a general sense, the primary goal of the present the ...
The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases a ...
Quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) are semiconductor heterostructures with nanoscopic dimensions. At this length scale, their properties are governed by quantum mechanics. The interest in these nanostructures is motivated by a ...
The growth of GaAs nanowires by the gallium-assisted method with molecular beam epitaxy (MBE) is presented in this review article. The structure of the grown nanowires was investigated by means of scanning and transmission electron microscopy as well as Ra ...
The occurrence of heterostructures of cubic silicon/hexagonal silicon as disks defined along the nanowire < 111 > growth direction is reviewed in detail for Si nanowires obtained using Cu as catalyst. Detailed measurements on the structural properties of b ...