Publication
Enabling proximity mask-aligner lithography with a 193nm CW light source
Abstract
We introduce a novel industrial grade 193nm continuous-wave laser light source for proximity mask-aligner lithography. A diode seed laser in master-oscillator power-amplification configuraton is frequency-quadrupled using lithiumtriborate and potassium-fluoro-beryllo-borate non-linear crystals. The large coherence-length of this monomodal laser is controlled by static and rotating shaped random diffusers. Beam shaping with imaging and non-imaging homogenizers realized with diffractive and refractive micro-optical elements is compared in simulation and measurement. We demonstrate resolution patterns offering resolutions
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Related concepts (18)
Extreme ultraviolet lithography
Extreme ultraviolet lithography (also known as EUV or EUVL) is an optical lithography technology used in semiconductor device fabrication to make integrated circuits (ICs). It uses extreme ultraviolet (EUV) wavelengths near 13.5 nm, using a laser-pulsed tin (Sn) droplet plasma (Sn ions in the ionic states from Sn IX to Sn XIV give photon emission spectral peaks around 13.5 nm from 4p64dn - 4p54dn+1 + 4dn-14f ionic state transitions.), to produce a pattern by using a reflective photomask to expose a substrate covered by photoresist.
Electron-beam lithography
Electron-beam lithography (often abbreviated as e-beam lithography, EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing). The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (developing). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.
Photolithography
In integrated circuit manufacturing, photolithography or optical lithography is a general term used for techniques that use light to produce minutely patterned thin films of suitable materials over a substrate, such as a silicon wafer, to protect selected areas of it during subsequent etching, deposition, or implantation operations. Typically, ultraviolet light is used to transfer a geometric design from an optical mask to a light-sensitive chemical (photoresist) coated on the substrate.
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