Semiconductor deviceA semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.
Negative resistanceIn electronics, negative resistance (NR) is a property of some electrical circuits and devices in which an increase in voltage across the device's terminals results in a decrease in electric current through it. This is in contrast to an ordinary resistor in which an increase of applied voltage causes a proportional increase in current due to Ohm's law, resulting in a positive resistance. While a positive resistance consumes power from current passing through it, a negative resistance produces power.
Dynamic voltage scalingIn computer architecture, dynamic voltage scaling is a power management technique in which the voltage used in a component is increased or decreased, depending upon circumstances. Dynamic voltage scaling to increase voltage is known as overvolting; dynamic voltage scaling to decrease voltage is known as undervolting. Undervolting is done in order to conserve power, particularly in laptops and other mobile devices, where energy comes from a battery and thus is limited, or in rare cases, to increase reliability.
Film capacitorFilm capacitors, plastic film capacitors, film dielectric capacitors, or polymer film capacitors, generically called film caps as well as power film capacitors, are electrical capacitors with an insulating plastic film as the dielectric, sometimes combined with paper as carrier of the electrodes. The dielectric films, depending on the desired dielectric strength, are drawn in a special process to an extremely thin thickness, and are then provided with electrodes.
High-electron-mobility transistorA high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.
GlobalFoundriesGlobalFoundries Inc. (GF) is a multinational semiconductor contract manufacturing and design company incorporated in the Cayman Islands and headquartered in Malta, New York. Created by the divestiture of the manufacturing arm of AMD, the company was privately owned by Mubadala Investment Company, the sovereign wealth fund of the United Arab Emirates, until an initial public offering (IPO) in October 2021. The company manufactures integrated circuits on wafers designed for markets such as mobility, automotive, computing and wired connectivity, consumer internet of things (IoT) and other industrial applications.
Electrolytic capacitorAn electrolytic capacitor is a polarized capacitor whose anode or positive plate is made of a metal that forms an insulating oxide layer through anodization. This oxide layer acts as the dielectric of the capacitor. A solid, liquid, or gel electrolyte covers the surface of this oxide layer, serving as the cathode or negative plate of the capacitor. Because of their very thin dielectric oxide layer and enlarged anode surface, electrolytic capacitors have a much higher capacitance-voltage (CV) product per unit volume than ceramic capacitors or film capacitors, and so can have large capacitance values.
65 nm processThe 65 nm process is an advanced lithographic node used in volume CMOS (MOSFET) semiconductor fabrication. Printed linewidths (i.e. transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm. For comparison, cellular ribosomes are about 20 nm end-to-end. A crystal of bulk silicon has a lattice constant of 0.543 nm, so such transistors are on the order of 100 atoms across. By September 2007, Intel, AMD, IBM, UMC and Chartered were also producing 65 nm chips.
Motor capacitorA motor capacitor is an electrical capacitor that alters the current to one or more windings of a single-phase alternating-current induction motor to create a rotating magnetic field. There are two common types of motor capacitors, start capacitor and run capacitor (including a dual run capacitor). Motor capacitors are used with single-phase electric motors that are in turn used to drive air conditioners, hot tub/jacuzzi spa pumps, powered gates, large fans or forced-air heat furnaces for example.
HiSiliconHiSilicon () is a Chinese fabless semiconductor company based in Shenzhen, Guangdong and wholly owned by Huawei. HiSilicon purchases licenses for CPU designs from ARM Holdings, including the ARM Cortex-A9 MPCore, ARM Cortex-M3, ARM Cortex-A7 MPCore, ARM Cortex-A15 MPCore, ARM Cortex-A53, ARM Cortex-A57 and also for their Mali graphics cores. HiSilicon has also purchased licenses from Vivante Corporation for their GC4000 graphics core. HiSilicon is reputed to be the largest domestic designer of integrated circuits in China.
