Silicon carbideSilicon carbide (SiC), also known as carborundum (ˌkɑrbəˈrʌndəm), is a hard chemical compound containing silicon and carbon. A semiconductor, it occurs in nature as the extremely rare mineral moissanite, but has been mass-produced as a powder and crystal since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests.
Voltage regulatorA voltage regulator is a system designed to automatically maintain a constant voltage. A voltage regulator may use a simple feed-forward design or may include negative feedback. It may use an electromechanical mechanism, or electronic components. Depending on the design, it may be used to regulate one or more AC or DC voltages. Electronic voltage regulators are found in devices such as computer power supplies where they stabilize the DC voltages used by the processor and other elements.
Power semiconductor deviceA power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics (for example in a switch-mode power supply). Such a device is also called a power device or, when used in an integrated circuit, a power IC. A power semiconductor device is usually used in "commutation mode" (i.e., it is either on or off), and therefore has a design optimized for such usage; it should usually not be used in linear operation. Linear power circuits are widespread as voltage regulators, audio amplifiers, and radio frequency amplifiers.
Power electronicsPower electronics is the application of electronics to the control and conversion of electric power. The first high-power electronic devices were made using mercury-arc valves. In modern systems, the conversion is performed with semiconductor switching devices such as diodes, thyristors, and power transistors such as the power MOSFET and IGBT. In contrast to electronic systems concerned with the transmission and processing of signals and data, substantial amounts of electrical energy are processed in power electronics.
Silicon controlled rectifierA silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell Laboratories in 1956. The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M.
ThyristorA thyristor (θaɪˈrɪstər) is a solid-state semiconductor device with four layers of alternating P- and N-type materials used for high-power applications. It acts exclusively as a bistable switch (or a latch), conducting when the gate receives a current trigger, and continuing to conduct until the voltage across the device is reverse-biased, or until the voltage is removed (by some other means). There are two designs, differing in what triggers the conducting state.
High-voltage direct currentA high-voltage direct current (HVDC) electric power transmission system (also called a power superhighway or an electrical superhighway) uses direct current (DC) for electric power transmission, in contrast with the more common alternating current (AC) transmission systems. Most HVDC links use voltages between 100 kV and 800 kV. However, a 1,100 kV link in China was completed in 2019 over a distance of with a power capacity of 12 GW. With this dimension, intercontinental connections become possible which could help to deal with the fluctuations of wind power and photovoltaics.
DiodeA diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance). It has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other. A semiconductor diode, the most commonly used type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. It has an exponential current–voltage characteristic. Semiconductor diodes were the first semiconductor electronic devices.
Silicon on sapphireSilicon on sapphire (SOS) is a hetero-epitaxial process for metal–oxide–semiconductor (MOS) integrated circuit (IC) manufacturing that consists of a thin layer (typically thinner than 0.6 μm) of silicon grown on a sapphire (Al2O3) wafer. SOS is part of the silicon-on-insulator (SOI) family of CMOS (complementary MOS) technologies. Typically, high-purity artificially grown sapphire crystals are used. The silicon is usually deposited by the decomposition of silane gas (SiH4) on heated sapphire substrates.
Electrical breakdownIn electronics, electrical breakdown or dielectric breakdown is a process that occurs when an electrically insulating material (a dielectric), subjected to a high enough voltage, suddenly becomes a conductor and current flows through it. All insulating materials undergo breakdown when the electric field caused by an applied voltage exceeds the material's dielectric strength. The voltage at which a given insulating object becomes conductive is called its breakdown voltage and, in addition to its dielectric strength, depends on its size and shape, and the location on the object at which the voltage is applied.
