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A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics (for example in a switch-mode power supply). Such a device is also called a power device or, when used in an integrated circuit, a power IC. A power semiconductor device is usually used in "commutation mode" (i.e., it is either on or off), and therefore has a design optimized for such usage; it should usually not be used in linear operation. Linear power circuits are widespread as voltage regulators, audio amplifiers, and radio frequency amplifiers. Power semiconductors are found in systems delivering as little as a few tens of milliwatts for a headphone amplifier, up to around a gigawatt in a high voltage direct current transmission line. The first electronic device used in power circuits was the electrolytic rectifier - an early version was described by a French experimenter, A. Nodon, in 1904. These were briefly popular with early radio experimenters as they could be improvised from aluminum sheets, and household chemicals. They had low withstand voltages and limited efficiency. The first solid-state power semiconductor devices were copper oxide rectifiers, used in early battery chargers and power supplies for radio equipment, announced in 1927 by L.O. Grundahl and P. H. Geiger. The first germanium power semiconductor device appeared in 1952 with the introduction of the power diode by R.N. Hall. It had a reverse voltage blocking capability of 200 V and a current rating of 35 A. Germanium bipolar transistors with substantial power handling capabilities (100 mA collector current) were introduced around 1952; with essentially the same construction as signal devices, but better heat sinking. Power handling capability evolved rapidly, and by 1954 germanium alloy junction transistors with 100 watt dissipation were available. These were all relatively low-frequency devices, used up to around 100 kHz, and up to 85 degrees Celsius junction temperature.

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An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically similar to a thyristor with a "MOS" gate (MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range.

Power semiconductor device