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A 30-frames/s, 252 x 144 SPAD Flash LiDAR With 1728 Dual-Clock 48.8-ps TDCs, and Pixel-Wise Integrated Histogramming

Related publications (34)

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Image acquisition method and system

Assim Boukhayma

A method of acquiring an image of a scene illuminated by a first beam, by means of a sensor including at least two pixels, including the steps of: a) for each pixel, reading a first output value of the pixel representative of the intensity of the radiation ...

2014

An event-detection high dynamic range CMOS image sensor

Giovanni De Micheli, Sandro Carrara, Yusuf Leblebici, Gözen Köklü

A novel CMOS image sensor is proposed to overcome the analog design limitations in Active Pixel Sensors - APS and large area overcome in Digital Pixel Sensors - DPS for use in bio-medical applications. The design includes a pixel level event generation mec ...

2013

The Gigavision Camera: A 2Mpixel Image Sensor with 0.56um2 1-T Digital Pixels

Edoardo Charbon, Hyungjune Yoon

We present a CMOS image sensor with deep-subwavelength, digital 1-T pixels designed for use in a digital film concept known as Gigavision (GV) camera. In GV, the levels of gray in the picture are derived from the concentration of activated pixels. Activate ...

2011

A Time-Gated 128x128 CMOS SPAD Array for on-Chip Fluorescence Detection

Edoardo Charbon

An all-digital, time-gated 128x128 CMOS image sensor for on-chip fluorescence detection is presented. The sensor pixel consists of a single-photon avalanche diode (SPAD), time gating circuitry and a 1bit memory. The sensor allows on-chip fluorescence detec ...

2011

SOI digital pixel sensor based on charge pumping

Maher Kayal, Jean-Michel Sallese, Louis Harik

In this paper, a digital pixel sensor in silicon on insulator (SOI) is presented. The active part is a partially depleted SOI phototransistor. The technique elaborated in Harik et al. (2008) [1] was designed and implemented. Moreover, we took advantage of ...

Elsevier2010

SOI digital pixel sensor based on charge pumping

Maher Kayal, Jean-Michel Sallese, Louis Harik

Abstract-In this paper, a digital pixel sensor in SOl is presented. The active part is a partially depleted Sol phototransistor. The technique elaborated in [I] was designed and implemented. Moreover, we took advantage of some of the characteristics of the ...

IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Single-photon detector arrays for time-resolved fluorescence imaging

Marek Gersbach

Time-correlated single photon counting techniques have recently established themselves in numerous fields of research. In particular, for fluorescence lifetime imaging, time-correlated single photon counting is often considered the absolute reference in te ...

EPFL2009

Broadband blue superluminescent light-emitting diodes based on GaN

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Gatien Cosendey, Luca Alex Milo Sulmoni

We report on the achievement of III-nitride blue superluminescent light-emitting diodes on GaN substrates. The epitaxial structure includes an active region made of In0.12Ga0.88N quantum wells in a GaN/AlGaN waveguide. Superluminescence under cw operation ...

2009

Semiconductor Image Sensing

Peter Seitz, Nicolas Blanc

Silicon is an excellent detector material for electromagnetic radiation in the wavelength range of 0.1 to 1000 nm. In the visible spectral range (400-700 nm), external quantum efficiencies approaching 100% are obtained. When combined with the amazing minia ...

Springer2008

Single-photon image sensors in CMOS

Cristiano Niclass

Among advanced electronic designs, vision systems are perhaps those that have undergone the most dramatic technological revolutions of the last decades. Recently, a new family of vision systems has emerged aimed at three-dimensional (3D) imaging. Many appl ...

EPFL2008