Publication

Electroluminescence of Single InGaN/GaN Micropyramids

Related publications (41)

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...

EPFL2024

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Yao Chen

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

EPFL2024

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Multi-User Precoder Designs for RGB Visible Light Communication Systems

Roser Vinals Terres

In this paper, we design linear precoders for the downlink of a visible light communication (VLC) system that simultaneously serves multiple users. Instead of using phosphor-coated white light-emitting diodes (PWLEDs), we focus on Red-Green-Blue light-emit ...

MDPI2020

Elucidating the role of the InGaN UL in the efficiency of InGaN based light-emitting diodes

Camille Haller

Blue III-nitride light-emitting diodes (LEDs) are widely used nowadays in solid-state lighting, as white light can be produced by combining yellow phosphors and blue LEDs. This technology has the advantage to have a higher luminous efficiency than incandes ...

EPFL2019

Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

Nicolas Grandjean, Jean-François Carlin, Pirouz Sohi, Yao Chen, Mauro Mosca

We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n(++)-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (

IOP PUBLISHING LTD2019

InAlN underlaver for near ultraviolet InGaN based light emitting diodes

Nicolas Grandjean, Jean-François Carlin, Mauro Mosca, Camille Haller, Rolf Erni

We report on InAlN underlayer (UL) to improve the efficiency of near ultraviolet (NUV) light emitting diodes (LEDs). While InGaN UL is commonly used in high-efficiency blue LEDs it may absorb light for shorter wavelengths. InAlN lattice-matched to GaN exhi ...

2019

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Denis Martin, Gwénolé Jean Jacopin, Wei Liu, Camille Haller

Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for solid-state lighting. They exhibit impressive figures of merit like an internal quantum efficiency close to 100%. This value is intriguing when considering the high ...

AMER INST PHYSICS2018

III-Nitride Semiconductor Photonic Nanocavities on Silicon

Ian Michael Rousseau

Optical nanocavities enhance light-matter interaction due to their high quality factors (Q) and small modal volumes (V). The control of light-matter interaction lies at the heart of potential applications for integrated optical circuits, including optical ...

EPFL2018

Light-emitting diode technology and applications: introduction

Nicolas Grandjean

Spurred on by the invention of the blue light-emitting diode ( LED) a quarter of a century ago, the LED industry has advanced dramatically and has revolutionized the signaling/signage, mobile and flat panel display, and more recently, general lighting mark ...

Optical Soc Amer2017

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