Effect of Thermal Cycling on the Structural Evolution of Methylammonium Lead Iodide Monitored around the Phase Transition Temperatures

Optoelectronic devices and solar cells based on organometallic hybrid perovskites have to operate over a broad temperature range, which may contain their structural phase transitions. For instance, the temperature of 330 K, associated with the tetragonal-cubic transformation, may be crossed every day during the operation of solar cells. Therefore, the analysis of thermal cycling effects on structural and electronic properties is of significant importance. This issue is addressed in the case of methylammonium lead iodide (CH3NH3PbI3) across both structural phase transitions (at 160 and 330 K). In situ synchrotron radiation X-ray diffraction (XRD) data recorded between 140 and 180 K show the emergence of a boundary phase between the orthorhombic and tetragonal phases, which becomes more abundant with successive thermal cycles. At high temperatures, around 330 K, an incommensurately modulated tetragonal phase is formed upon repeated crossings of the phase boundary between tetragonal and cubic phases. These alterations, which indicate a gradual evolution of the material under operating conditions of photovoltaic devices, are further documented by electrical resistivity and heat capacity measurements.

A multi-technique approach to study the microstructural properties of tin-based transparent conductive oxides

Federica Landucci

Transparent conductive oxides (TCOs) are semiconductor-like materials that exhibit high electrical conductivity and high optical transparency combined. They are adopted in various applications ranging from gas sensors, to electrochromic windows, to photovoltaic cells. Indium-based TCOs represent the industry standard. Nevertheless, indium is among the less abundant elements in the earth crust and forecasts based on its current consumption envisage an urgent need to replace it. Tin-based TCOs are a promising alternative, since their opto- electronic characteristics mimic the ones of indium-based materials. This thesis aims to investigate the link between optoelectronic and microstructural properties of tin dioxide and zinc tin oxide (ZTO) with a composition Zn0.05Sn0.30O0.65 and their stability when submitted to thermal treatments. Indeed, lots of practi- cal applications require the TCO to operate in high temperature conditions. To conduct this study, a combination of analytical techniques, such as transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), X- ray diffraction (XRD), electron paramagnetic resonance (EPR) and differential scanning calorimetry (DSC) was employed. Amorphous SnO2 and ZTO were deposited by RF sputtering and annealed up to 1050°C in different atmospheres. The influence of annealing temperature and atmosphere were decoupled and led us to an in-depth comprehension of the mechanisms governing the optoelectronic properties of both materials. When annealed in air, between room temperature and 300°C, ZTO exhibits increased mobility and carrier concentration with respect to the as-deposited state. This increase, investigated with DSC, was ascribed to a structural relaxation that allows point defects to release electrons in conduction band. Between 300°C and 500°C atmospheric oxygen passivates oxygen vacancies, drastically decreasing the carrier concentration and therefore causing a large drop of the conductivity. EPR experiments allowed to ascribe the drop in conductivity to the decrease of carrier concentration, which occurs slightly before the phase change. At 570°C (and 930°C for the case of vacuum annealing) the phase change occurs and the ZTO crystallizes in the rutile form of SnO2. The material becomes completely insulating. When the temperature is increased to 1050°C, evaporation of zinc is observed. In order to improve the electrical conductivity of ZTO at high temperature, a doping strategy was implemented starting from DFT calculations conducted by a partner group, who screened among the entire periodic table, which elements are the best candidates to act as n-dopants for ZTO. Bromine and iodine were retained, since they were found to be the most energetically favorable to become substitutional defects for a tin site. An exploratory doping route is therefore presented and the treated samples analyzed with TEM, EDX and UV-VIS-IR spectroscopy. Finally, the structural properties of an indium-based TCO (zirconium-doped indium oxide) were investigated and used as a benchmark to propose a crystallization model for the tin-based, as well as the indium-based materials. The influence of pa- rameters such as the material thickness, annealing atmosphere and temperature and deposition pressure are discussed for both materials.

EPFL2019

Normal state transport properties of novel superconductors

Balazs Sipos

The discovery of high temperature superconductivity in the cuprates in 1986 has boosted the research in strongly correlated materials. One strong motivation was and stays the understanding the high-Tc phenomenon with the hope that one can ultimately engineer new materials with even higher Tc. Besides the in-depth investigation of cuprates, there is a strong tendency in the solid state community to find new superconductors, which by themselves are interesting for applications, or by their properties they can contribute to the understanding of the high-Tc phenomenon. The program of my doctoral thesis was three-fold: i) to address one important issue in the cuprate superconductors, that of the role of homogeneity in the underdoped part of the phase diagram; ii) what is the effect of disorder in MgB2 superconductor, which has high potentials for applications; iii) to discover new superconductors in the family of transition metal dichalcogenides. All these materials are in some sense unconventional superconductors. The cuprates by their high Tc and the symmetry of the order parameter, MgB2 by its two-band superconductivity and Tc of 39 K, and the dichalcogenides by the appearance of superconductivity on the background of competing interactions. Measurements of transport properties, such as resistivity and thermoelectric power, were used to get insight in the behavior of these materials. Besides temperature as variable, I applied high pressure, extreme magnetic fields and controlled disorder introduced by fast electron irradiation. In the first part I present the pressure dependent study of two members of the transition metal dichalcogenides having 1T structure, 1T-TiSe2 and 1T-TaS2, where superconductivity was never observed in a pristine sample. 1T-TiSe2 has a CDW phase below 220 K which origin, weather it is driven by an excitonic mechanism or by a Jahn-Teller distortion, is an ongoing question. By applying pressure I showed that the pristine sample is superconducting in the pressure range of 2.0–4.0 GPa. This range remarkably coincides with the short range fluctuating CDW before its disappearance at the upper pressure value. If CDW is due to excitonic interactions than our observations suggest that it can be at the origin of superconductivity, as well. The second dichalcogenide is the 1T-TaS2, where a Mott-insulator phase appears on the top of a commensurate CDW. By applying pressure I was able to melt that Mott-phase, and reveal that the material is superconducting above 2.5 GPa with Tc of 5.9 K. Unexpectedly, superconductivity is born from a nonmetallic phase, and stays remarkably stable up to the highest applied pressure of 24 GPa. In the second part I tried to give my contribution to the field of high-Tc superconductors. I carefully selected few high quality underdoped Bi2Sr2PrxCa1-xCu2O8-δ sample, to address the nature of the low temperature ground state by applying high magnetic field. Although former measurements by other groups showed that at high underdoping, the ground state is an insulator, I found that a sample with as low Tc as 15 K exhibits metallic behavior up to 60 T. Furthermore, I showed that a inhomogeneous distribution of the doping atoms can completely mask the intrinsic normal state of a high-Tc superconductor. In the last part of my thesis I focused on the two-band superconductor MgB2 by studying the scattering between the bands by the means of the Matthiessen's rule. I made a systematic study of the influence of defects created by fast electron irradiation, and found that the the Matthiessen's rule is satisfied for the defect concentration range I induced. I further compare the influence of defects on the critical temperature and the residual resistivity in MgB2 with superconductors with various order parameters, and found that the decrease-rate of Tc in our system is within the range of a response of a superconductor with an s-wave order parameter.

EPFL2008

Single crystal study of the heavy-fermion antiferromagnet CePt2In7

Philip Johannes Walter Moll

We report the synthesis, structure, and physical properties of single crystals of CePt2In7. Single crystal x-ray diffraction analysis confirms the tetragonal I4/mmm structure of CePt2In7 with unit cell parameters a = 4.5886(6) Å, c = 21.530(6) Å and V = 453.32(14) Å3. The magnetic susceptibility, heat capacity, Hall effect and electrical resistivity measurements are all consistent with CePt2In7 undergoing an antiferromagnetic order transition at TN = 5.5 K, which is field independent up to 9 T. Above TN, the Sommerfeld coefficient of specific heat is γ ≈ 300 mJ mol−1 K−2, which is characteristic of an enhanced effective mass of itinerant charge carriers. The electrical resistivity is typical of heavy-fermion behavior and gives a residual resistivity ρ0 ~ 0.2 µΩ cm, indicating good crystal quality. CePt2In7 also shows moderate anisotropy of the physical properties that is comparable to structurally related CeMIn5 (M = Co, Rh, Ir) heavy-fermion superconductors.