PhotodetectorPhotodetectors, also called photosensors, are sensors of light or other electromagnetic radiation. There is a wide variety of photodetectors which may be classified by mechanism of detection, such as photoelectric or photochemical effects, or by various performance metrics, such as spectral response. Semiconductor-based photodetectors typically photo detector have a p–n junction that converts light photons into current. The absorbed photons make electron–hole pairs in the depletion region.
Three-dimensional integrated circuitA three-dimensional integrated circuit (3D IC) is a MOS (metal-oxide semiconductor) integrated circuit (IC) manufactured by stacking as many as 16 or more ICs and interconnecting them vertically using, for instance, through-silicon vias (TSVs) or Cu-Cu connections, so that they behave as a single device to achieve performance improvements at reduced power and smaller footprint than conventional two dimensional processes. The 3D IC is one of several 3D integration schemes that exploit the z-direction to achieve electrical performance benefits in microelectronics and nanoelectronics.
Electronic design automationElectronic design automation (EDA), also referred to as electronic computer-aided design (ECAD), is a category of software tools for designing electronic systems such as integrated circuits and printed circuit boards. The tools work together in a design flow that chip designers use to design and analyze entire semiconductor chips. Since a modern semiconductor chip can have billions of components, EDA tools are essential for their design; this article in particular describes EDA specifically with respect to integrated circuits (ICs).
Physical design (electronics)In integrated circuit design, physical design is a step in the standard design cycle which follows after the circuit design. At this step, circuit representations of the components (devices and interconnects) of the design are converted into geometric representations of shapes which, when manufactured in the corresponding layers of materials, will ensure the required functioning of the components. This geometric representation is called integrated circuit layout.
Challenger 2The FV4034 Challenger 2 (MoD designation "CR2") is a third generation British main battle tank (MBT) in service with the armies of the United Kingdom, Oman, and Ukraine. It was designed by Vickers Defence Systems (now BAE Systems Land & Armaments) as a private venture in 1986, and was an extensive redesign of the company's earlier Challenger 1 tank. The Ministry of Defence ordered a prototype in December 1988. Despite outward similarities to the Challenger 1, design and technological developments mean that only about 3% of components are interchangeable with the earlier vehicle.
Orbital angular momentum of lightThe orbital angular momentum of light (OAM) is the component of angular momentum of a light beam that is dependent on the field spatial distribution, and not on the polarization. It can be further split into an internal and an external OAM. The internal OAM is an origin-independent angular momentum of a light beam that can be associated with a helical or twisted wavefront. The external OAM is the origin-dependent angular momentum that can be obtained as cross product of the light beam position (center of the beam) and its total linear momentum.
RadiographyRadiography is an imaging technique using X-rays, gamma rays, or similar ionizing radiation and non-ionizing radiation to view the internal form of an object. Applications of radiography include medical radiography ("diagnostic" and "therapeutic") and industrial radiography. Similar techniques are used in airport security (where "body scanners" generally use backscatter X-ray). To create an image in conventional radiography, a beam of X-rays is produced by an X-ray generator and is projected toward the object.
PhotodiodeA photodiode is a light-sensitive semiconductor diode. It produces current when it absorbs photons. The package of a photodiode allows light (or infrared or ultraviolet radiation, or X-rays) to reach the sensitive part of the device. The package may include lenses or optical filters. Devices designed for use specially as a photodiode use a PIN junction rather than a p–n junction, to increase the speed of response. Photodiodes usually have a slower response time as their surface area increases.
Active-pixel sensorAn active-pixel sensor (APS) is an , which was invented by Peter J.W. Noble in 1968, where each pixel sensor unit cell has a photodetector (typically a pinned photodiode) and one or more active transistors. In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as amplifiers. There are different types of APS, including the early NMOS APS and the now much more common complementary MOS (CMOS) APS, also known as the CMOS sensor.
Photon countingPhoton counting is a technique in which individual photons are counted using a single-photon detector (SPD). A single-photon detector emits a pulse of signal for each detected photon. The counting efficiency is determined by the quantum efficiency and the system's electronic losses. Many photodetectors can be configured to detect individual photons, each with relative advantages and disadvantages. Common types include photomultipliers, geiger counters, single-photon avalanche diodes, superconducting nanowire single-photon detectors, transition edge sensors, and scintillation counters.
