Elucidating the role of the InGaN UL in the efficiency of InGaN based light-emitting diodes
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Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
It was about 125 years ago that the light bulb was commercialized by Thomas Edison. No doubt a brilliant invention at the time, today its low power conversion efficiency is one of the reasons why lighting in the western world has such high energy consumpti ...
Light emitting diodes (LEDs) based on In(x)Gal(1-x)N (x = 0.15-0.2)/GaN multiple-quantum wells ( MQWs) have been grown on sapphire substrates. Their wavelength emission can be tuned from blue to orange by increasing the QW thickness. This opens the way for ...
By comparing photoluminescence and photo reflectance spectra taken on a series of InGaN-GaN quantum wells grown under identical conditions except the growth time of the InGaN layers, we could monitor the Quantum Confined Stark Effect (QCSE) without changin ...
InGaN/GaN heterostructure samples were grown by molecular beam epitaxy using ammonia as a nitrogen precursor. The growth of InGaN/GaN self-assembled quantum dots was monitored in situ by reflection high energy electron diffraction intensity oscillations. A ...
The lack of appropriate substrates has delayed the realisation of devices based on III-nitrides. Currently, the heteroepitaxial growth of GaN by metal organic vapour phase epitaxy (MOVPE) produces GaN layers which, despite huge densities of dislocations, a ...
We are progressively approaching the physical limits of microcavity LEDs (MC-LEDs) for high brightness, high efficiency LEDs. They are promising high efficiency devices and they offer the very attractive prospect of full planar fabrication process. However ...
We present a study on the dependence of the external Quantum Efficiency (QE) of Light Emitting Diodes (LEDs) on the device properties and p-contact metallisation. The external QE could be doubled by changing the p-type contact from oxidised Ni/Au to non-an ...
The use of photonic crystals (PCs) for realistic light emitting diodes (LEDs) is discussed, given the constraints of planar semiconductor technology. A viable route for the fabrication of high-efficiency high-brightness electrically injected LEDs is presen ...
We present a study on the improvement of the external Quantum Efficiency (QE) of Gallium-Nitride-based Light Emitting Diodes (LEDs) by the use of the Single Mirror (SMLED) design [N.E.J. Hunt et al., Electron. Lett. 28, 2169 (1992)]. Three different substr ...
