H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon
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In this paper, we present GaN-on-Si vertical transistors consisting of a 6.7 pm thick n-p-n heterostructure grown on 6-inch silicon substrates by MOCVD. The fabricated vertical trench gate MOSFETs exhibited E-mode operation with a threshold voltage of 3.3 ...
Detection of analytes by means of field-effect transistors bearing ligand-specific receptors is fundamentally limited by the shielding created by the electrical double layer (the “Debye length” limitation). We detected small molecules under physiological h ...
In-plane-gatefield-effect transistors (IPGFETs) offer an innovative device architecture in which the channel conductivity is modulated by the electric field from the 2D electron gas in the two adjacent in-plane gates, isolated by etched trenches. The plana ...
The influence of the thickness of a thin (1.5-30 nm) copper layer on the thermal boundary conductance (TBC) at the interface between gold and silicon, sapphire and diamond, respectively, was studied using Time Domain Thermoreflectance. Overall, a monotonic ...
Organic thin-film transistors (TFTs) have undergone tremendous progress in the past few years. Their great potential in terms of mechanical flexibility, light weight, low-cost and large-area fabrication makes them promising candidates for novel electronic ...
The evolution of computing has lead to very different realizations to cope with performance and energy consumption density, two competing factors that are not obvious to reconcile. The current semiconductor technologies, mainly FinFETs and FDSoI, provide u ...
Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...
The effect of an Al2O3 interlayer on the thermal conductance of metal (Al)/non-metal (diamond and silicon) interfaces is investigated using Time Domain ThermoReflectance (TDTR). Interlayers between 1.7 and 20nm are deposited on oxygen-terminated diamond an ...
The effect of oxygen termination of diamond surfaces on the interface thermal conductance between Ag–3Si and diamonds is investigated in dependence of temperature by measuring thermal conductivity in the temperature range from 4 K up to ambient. Composites ...
The effect of an Al2O3 interlayer on the thermal conductance of metal (Al)/non-metal (diamond and silicon) interfaces is investigated using Time Domain ThermoReflectance (TDTR). Interlayers between 1.7 and 20 nm are deposited on oxygen-terminated diamond a ...