H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon
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InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...
Silicon transistor scaling is approaching its end and a transition to novel materials and device concepts is more than ever essential. High-mobility compound semiconductors are considered promising candidates to replace silicon, targeting low-power logic a ...
This thesis advances the field of high-voltage thin film transistors (HVTFTs) and dielectric elastomer actuators (DEAs) by demonstrating a strategy for low-voltage addressing of an array of high voltage soft actuators suspended on a flexible substrate.Fi ...
Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...
In the past half-century, the semiconductor industry has relied on the scaling of complementary metal-oxide-semiconductor (CMOS) transistor dimensions and on material and geometrical innovations to increase the computational density. Approaching the end of ...
We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, re ...
The objective of this semester project is to investigate different fabrication processes and materials used for the fabrication of piezoelectric electrodes. More in detail, to investigate if the use of test wafers and high resistivity wafers play a role on ...
The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...
The thermal boundary conductance (TBC) of metal/dielectric couples was measured for a large variety of metals on silicon, sapphire, and diamond using time domain thermoreflectance and compared to data previously obtained on diamond. In the case of silicon, ...
Diamond is an exceptional material that has recently seen a remarkable increase in interest in academic research and engineering since high-quality substrates became commercially available and affordable. Exploiting the high refractive index, hardness, las ...