Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)
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For the past couple of decades the desire to add more complexity to a computer chip, while simultaneously reducing the cost per bit, has been accommodated by down-scaling. This approach has been extremely successful in the past, but like all good things it ...
The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...
Because the market has an insatiable appetite for new functionality, performance is becoming an increasingly important factor. The telecommunication and network domains are especially touched by this phenomenon but they are not the only ones. For instance, ...
Coupling coefficients calculation is known to be a critical issue in embedded Non-Volatile Memory (eNVM) compact modeling. In this paper we have implemented the charge balance method within the Brew’s Charge Sheet Model equation, determining the floating g ...
Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...