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The impact of electrode-adjacent passive layers on the small signal dielectric response of a ferroelectric film containing a 180degrees-domain pattern has been analyzed. It is shown that, for a realistic physical situation, the so-called "in-series capacit ...
We investigate the dielectric permittivity of SiO2 on Si(100) substrates using a first-principles approach. It is shown that both the static and high-frequency dielectric constants of the oxide overlayer increase when the oxide thickness is reduced. This b ...
A theoretical study on the effect of spontaneous polarization screening on the dielectric response of ferroelectric films with 180 degrees domains going through the film thickness (through-domains) is presented. It has been shown by several researchers tha ...
Dielectric properties of perovskites are studied both to gain insight into fundamental aspects of the freezing of polar disorder, and to investigate their technological potential. The dynamics of freezing of polar disorder is investigated in single crystal ...
The operational range of MEMS electrostatic parallel plate actuators can be extended beyond pull-in with the presence of an intermediate dielectric layer, which has a significant effect on the behavior of such actuators. Here we study the behavior of canti ...
Relaxor ferroelectric thin films exhibit a drastic reduction in the dielectric constant and associated properties in the thin film form, even for thicknesses in the micron range, which are essentially infinity for the size effects typically investigated in ...
The use of low-stress SU8 nanocomposites as a functional material for micro- parts and coating applications is described in this paper. It was found that the nanoparticles lower the internal stress and decrease the wear rate and frictional coefficient of t ...
The change in permittivity of bismuth zinc niobate (BZN) films with the cubic pyrochlore structure under an applied electric field was measured as a function of temperature. Dielectric measurements were performed using parallel-plate capacitor structures w ...
The effect of 1 MeV ion implantation on leakage conduction, dielectric and ferroelectric properties of the Pt/Pb(ZrxTi1-x)(2)O-3/Pt capacitors is studied for a wide range of implantation doses (10(10)-10(16) cm(-2)). It is shown that the implantation of Pt ...
Dielectric permittivity of PbMg1/3Nb2/3O3 (PMN) relaxor was investigated as a function of DC bias and AC driving field. In single crystals, DC and AC field effects exhibited very different behavior, including anisotropy and sign of the effect. It was shown ...