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By using chemical beam epitaxy at growth temperatures as low as 460-480 degrees C, we have overcome strain relaxation problems that prevented so far the successful use of InAsP quantum wells in 1.55 mu m lasers. Five quantum well InAsP/InGaAsP horizontal c ...
High quality InP/InGaAsP Distributed Bragg Reflectors (DBRs) are a key element in Vertical Cavity Surface Emitting Laser (VCSELs) for long wavelength (1.55 mu m) applications [1-3]. Because of the small index difference between InP and InGaAsP, more than 3 ...
We report on the realization of InGaAs-lnGaAsP separate confinement heterostructure multiple quantum well lasers grown by chemical beam epitaxy. We discuss key growth parameters and characterization by secondary-ion mass spectroscopy, transmission electron ...
