Substrate-Selective Morphology of Cesium Iodide Clusters on Graphene
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Electron Beam Induced Deposition (EBID) allows deposition of three-dimensional micro- and nano-structures of conductive and insulating materials on a wide range of substrates. The process is based on the decomposition of molecules of a pre-selected precurs ...
We report the near-edge x-ray absorption fine-structure (NEXAFS) spectrum of a single layer of graphite (graphene) obtained by micromechanical cleavage of highly ordered pyrolytic graphite on a SiO2 substrate. We utilized a photoemission electron microscop ...
Using a spherical aberration (Cs)-corrected scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS), we Investigated a 6 degrees low-angle [001] tilt grain boundary in SrTiO(3). The enhanced spatial resolution of the a ...
The use of electron energy loss spectroscopy (EELS) in determining the electronic properties of Si and thickness dependent loss function of Si with 0.14 eV energy resolution were investigated. The dielectric response function was used to describe the inter ...
We have evaluated the structure of high-reflectivity InP/InGaAsP distributed Bragg reflectors grown by chemical-beam epitaxy at a growth rate of 3 mu m/h. Transmission electron microscopy combined with electron energy loss spectroscopy indicate lateral flu ...
Graphene nanoribbons were synthesized by oxidative unzipping of single-wall carbon nanotubes (SWCNTs). The nanoribbons produced from SWCNTs were characterized using FT-IR, Raman and X-ray photoelectron spectroscopy. For the morphological study of the produ ...
We have synthesized Si Nps rich submicron area within a thin SiO2 layer using a new method called “stencil-masked ion implantation”. It consists in implanting silicon ions at ultra-low energy through windows (from 50nm to 2μm) opened in a stencil mask cont ...
High-resolution electron energy-loss spectroscopy in a transmission electron microscope is a very powerful method for the study of electronic structure of materials. The fine structure of Ga L2,3 and N ionization edges in c-GaN and h-GaN was studied using ...