Novel Slanted Field Plate Technology for GaN HEMTs by Grayscale Lithography on Flowable Oxide
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We report a new and surprising enhancement of the electric field at the Si/SiO2 interface following the cessation of intense pulsed near-infrared radiation. The phenomenon, measured by optical second-harmonic generation, occurs only for photon energies and ...
Electrostatic effects which take place in group-m nitrides in their wurtzite crystallographic phase have important consequences on the optical properties of (Al,Ga)N/GaN multiple quantum wells. A low-temperature photoluminescence study shows that the behav ...
InAlAs/InGaAs pseudomorphic HEMTs suffer from two drawbacks which can impede their future developments: a mechanical instability of their strained layers and a low breakdown voltage. In this work we study pseudomorphic structures where the channel and the ...
Performance of dielectric elastomer actuators is closely related to its breakdown field. On the other hand, to enhance the available energy, multilayer configuration is needed to increase the amount of active material. However, multilayer configuration suf ...
