Determination of the internal piezoelectric potentials and indium concentration in InGaN based quantum wells grown on relaxed InGaN pseudo-substrates by off-axis electron holography
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Nanocrystalline metals have been an area of great interest in recent years due to their enhanced characteristics. One of the most striking is implied by the Hall-Petch relation: with decreasing grain size the material becomes stronger. This promise is fulf ...
We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local ...
The effects of neutron irradiation on austenitic stainless steels, usually used for the manufacturing of internal elements of nuclear reactors (e.g. the core shrouds), are the alteration of the microchemistry and the microstructure, and, as a consequence, ...
Intersubband (lSB) optical absorption in different nitride-based heterostructures grown by metal-organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi-quantum wells (MQWs) is investigated. At high concentration (15%) ...
The understanding of material self-assembling and self-organization mechanisms, at mesoscale, is crucial for nanotechnologies development. Such structures, hierarchically organized in superlattices or colloïdal crystals, are observed in inorganic or organo ...
We report on a dramatic improvement of the optical and structural properties of AlN/GaN multiple quantum wells (MQWs) grown by metal-organic vapor-phase epitaxy using indium as a surfactant. This improvement is observed using photoluminescence as well as x ...
Investigation of the microstructure, properties and biocompatibility of the Ti-6Al-4V alloy nitrided under glow discharge was performed. The microstructural analyses were carried out using light microscopy, X-ray diffraction, analytical scanning and transm ...
Information for phase identification may be gathered in the electron transmission microscope with spatial resolution down to the nanometre scale. Energy dispersive X-ray and electron energy loss spectrometries are based on inelastic electron/sample interac ...
The fabrication of nanostructures using III-V semiconductors results in materials with different physical properties than the bulk materials. Their optical and electronic properties are tailored and developed on a large scale for the fabrication of optical ...
Silicon has become the most important material for the semiconductor industry, due to several advantages like good heat conductance or the high quality of its oxide. Nevertheless, for opto-electronic devices, the limitation of its indirect band-gap has ant ...