Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
The principles of gallium arsenide diode lasers are described and the history of developments is sketched. The importance of threshold current density is emphasised and it is shown that confinement of carriers is improved in heterojunctions using gallium-a ...
The light output and the electron density within the active layer of a semiconductor laser have been calculated from the steady state solution . The assumed rate equation model takes into account the spontaneous emission into the lasing modes. Simple analy ...
For pt. I, see ibid., vol.6, 451 (1974). The light output powers of a semiconductor laser diode within an external cavity and of two optical coupled diodes are evaluated as a function of the system parameters (drive currents and coupling coefficient). A po ...
We studied the influence of the growth temperature Ts and of the InGaAs quantum-well channel thickness dch on the 300 and 77 K Hall electrical properties of pseudomorphic MODFET-type heterostructures grown by molecular-beam epitaxy (MBE). In agreement with ...
We explore the formation of Schottky barriers by adsorption of Ge overlayers onto single crystal Ni and Ag substrates. The results are compared to earlier results from Si-on-metal systems as well as interfaces formed by the metal-on-semiconductor depositio ...
Contact potential difference measurements of synchrotron radiation-induced surface photovoltage (SPV) are performed on GaAs(110) as a function of metal coverage and temperature. On low doped n-samples, the low temperature SPV (0.55 eV) is almost equal to t ...
In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH), while maintaining a low specific on resistance (RON,SP) and high current density ( ...
Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of ma ...
