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Low-power image sensor system with single-photon avalanche diode photodetectors

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Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

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Single-photon avalanche diodes (SPADs) are novel image sensors that record the arrival of individual photons at extremely high temporal resolution. In the past, they were only available as single pixels or small-format arrays, for various active imaging ap ...

IEEE COMPUTER SOC2023

The low-light performance of a CMOS image sensor (CIS) is one of the most important performance metrics in a camera, whether it is used in products for consumer electronics or in an image-acquisition system for machine vision or the Internet-of-Things (IoT ...

EPFL2020

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In this article, the impact of the combination of the column-level gain and the correlated multiple sampling (CMS) on the noise of CMOS image sensor (CIS) readout chains is first analyzed. The theory is then validated experimentally with CIS readout chains ...

2020

Multispectral image sensor and method for fabrication of an image sensor

Assim Boukhayma

The present invention relates to a multispectral image sensor having a pixel array for detecting images with light components in different wavelength ranges, comprising a plurality of imaging layers each embedded in a semiconductor substrate, wherein in ea ...

2020

Nowadays, efficient and remote health monitoring is becoming increasingly important, given both the ageing of population and the combined action of an increase in obesity level and cardiovascular diseases. The healthcare industry is becoming more reliant o ...

EPFL2020

Pixel sensor cell for cmos image sensors with enhanced conversion gain at high dynamic range capability

Assim Boukhayma

The present invention relates to a pixel sensor cell (1) for a CMOS sensor device comprising: - a photodiode (11) for generating photoelectrons; - a first transfer transistor (12) coupling the photodiode (11) with an intermediate node (IN) and configured t ...

2019

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In this paper, we propose a physics-based compact model of the pinned photodiode (PPD) combined with the transfer gate. A set of analytical expressions is derived for the 2-D electrostatic profile, the PPD capacitance, and the charge transfer current. The ...

2019

A Sub-0.5 Electron Read Noise VGA Image Sensor in a Standard CMOS Process

Christian Enz, Assim Boukhayma, Arnaud Peizerat

A sub-0.5e−rms temporal read noise VGA (640H×480V) CMOS image sensor has been integrated in a standard 0.18μm 4PM CMOS process. The low noise performance is achieved exclusively through circuit optimization without any process refinements. The presented im ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Ultra Low Noise CMOS Image Sensors

Assim Boukhayma

CMOS Image Sensors (CIS) overtook the charge coupled devices (CCDs) in low noise performance. Photoelectron counting capability is the next step for CIS for ultimate low light performance and new imaging paradigms. This work presents a review of CMOS image ...

EPFL2016