Publication

Kilowatt-range Picosecond Switching Based on Microplasma Devices

Related publications (42)

Electronic metadevices for terahertz applications

The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices(1). As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting ma ...

NATURE PORTFOLIO2023

Frontiers in the Application of RF Vacuum Electronics

Timothy Goodman

The application of radio frequency (RF) vacuum electronics for the betterment of the human condition began soon after the invention of the first vacuum tubes in the 1920s and has not stopped since. Today, microwave vacuum devices are powering important app ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Luca Nela

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments

Chunmin Zhang

Total ionizing radiation compromises electrical characteristics of microelectronic devices and even causes functional failures of integrated circuits. It has been identified as a potential threat to electronic components, especially those in high-energy ph ...

EPFL2021

Integrated electronic device with embedded microchannels and a method for producing thereof

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp

The present invention relates to a method for fabricating an integrated electronic device with a microchannel, comprising the steps of: - Providing a homogeneous or heterogeneous substrate with one or more layers of material, respectively; - Forming at lea ...

2021

High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon

Clarissa Convertino

Silicon transistor scaling is approaching its end and a transition to novel materials and device concepts is more than ever essential. High-mobility compound semiconductors are considered promising candidates to replace silicon, targeting low-power logic a ...

EPFL2020

Coss Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

Elison de Nazareth Matioli, Armin Jafari, Luca Nela, Palliyage Srilak Nirmana Perera

The dissipated energy (Ediss) related to the resonant charging/discharging of a transistor output capacitance, becomes a dominant loss factor for power converters operating in the MHz range. A recent work has introduced a small-signal measurement method to ...

2020

Opportunities and challenges of 2D materials in back-end-of-line interconnect scaling

Benjamin Aaron Helfrecht, Alejandro Strachan

As the challenges in continued scaling of the integrated circuit technology escalate every generation, there is an urgent need to find viable solutions for both the front-end-of-line (transistors) and the back-end-of-line (interconnects). For the interconn ...

AMER INST PHYSICS2020

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