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Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

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This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes. The model is dev ...

2018

Characterization and Modeling of 28-nm FDSOI CMOS Technology down to Cryogenic Temperatures

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers, Louis Hutin

This paper presents an extensive characterization and modeling of a commercial 28-nm FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic phenomena influencing this technology are discussed. The low-temperature transfer char ...

2018

Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality

Cem Alper

The semiconductor industry, governed by the Moore's law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor ...

EPFL2017

Characterization of bipolar transistors for cryogenic temperature sensors in standard CMOS, 2016 IEEE SENSORS

Edoardo Charbon, Harald Arjan Robert Homulle, Fabio Sebastiano

This paper presents the cryogenic characterization of the bipolar substrate PNPs that are typically employed as sensing elements in CMOS integrated temperature sensors. PNPs realized in a standard 160-nm CMOS technology were characterized over the temperat ...

2017

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Jian Zhang

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...

EPFL2016

Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arr ...

Ieee-Inst Electrical Electronics Engineers Inc2016

GaN based electronic devices have progressed rapidly over the past decades and are nowadays starting to replace Si and classical III-V semiconductors in power electronics systems and high power RF amplifiers. AlGaN/GaN heterostructures have been, until rec ...

EPFL2015

Advanced power electronic devices based on Gallium Nitride (GaN)

Elison de Nazareth Matioli, Bin Lu, Feng Gao

It is the most exciting time for power electronics in decades. The combination of new applications, such as microinverters, electric vehicles and solid state lighting, with the new opportunities brought by wide bandgap semiconductors is expected to signifi ...

IEEE2015

Characterization of 6.5 kV IGBTs for High-Power Medium-Frequency Soft-Switched Applications

Drazen Dujic

Medium voltage high-power applications are usually realized using high voltage semiconductors (3.3 kV and above) operated in the hard switching mode with low switching frequencies (several hundreds of hertz). However, for high-power dc–dc converters employ ...

2014

Power-Gated Differential Logic Style Based on Double-Gate Controllable-Polarity Transistors

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Jian Zhang

This brief presents a novel power-gating technique for differential cascade voltage switch logic (DCVSL) based on double-gate (DG) controllable-polarity field-effect transistors (FETs). DG controllable-polarity FETs, commonly referred to as ambipolar trans ...

Ieee-Inst Electrical Electronics Engineers Inc2013