A Cryogenic Broadband Sub-1-dB NF CMOS Low Noise Amplifier for Quantum Applications
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Large-area and large-volume radio frequency (RF) plasmas are produced by different arrangements of an elementary electrical mesh consisting of two conductors interconnected by a capacitor at each end. The obtained cylindrical and planar RF networks are res ...
Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid appro ...
Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...
Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...
The progress in the technology of microelectronic devices has led to a strong miniaturization and high performance for circuits and systems, enabling modern applications such as mobile computing and communications. Today, remaining "off-chip" components th ...
Presented is a transistor-level implementation of a floating and tunable CMOS active inductor. It is based on the classical gyrator-C topology and is enhanced by adding an internal offset reduction mechanism to guarantee functionality also for unbalanced D ...
In organic thin-film transistors (OTFTs), the conducting channel is located near the interface between the organic semiconductor and the dielectric; this interface is crucial for transistor performance. The goal of this thesis is to study the effect of thi ...
This article explores the main tradeoffs in design of power and area efficient bandgap voltage reference (BGR) circuits. A structural design methodology for optimizing the silicon area and power dissipation of CMOS BGRs will be introduced. For this purpose ...
A reconfigurable bandpass filter able to switch between WiFi and UMTS reception standards is presented. The topology allows achievement of two accurate centre frequencies, each associated with a precisely defined bandwidth, using six pin diodes. The design ...
An important prerequisite for the design of digital integrated circuits is the ability to control the threshold voltage of the individual transistors during manufacturing. To address the problem of controlling the threshold voltage of low-voltage organic t ...