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A Cryogenic Broadband Sub-1-dB NF CMOS Low Noise Amplifier for Quantum Applications

Related publications (43)

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Weak Inversion for Ultra Low-Power and Very Low-Voltage Circuits

Eric Vittoz

This paper discusses techniques, limitations and possible future developments of circuits based on transistors operated in the weak inversion (w.i.) mode, also called subthreshold mode. In analog circuits, w.i. is reached at very low current, but it is als ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Micromachined chip-scale plasma light source

Philippe Renaud, Herbert Shea

We report on the microfabrication and testing of a chip- scale plasma light source. The device consists of a stack of three anodically bonded Pyrex wafers, which hermetically enclose a gas-filled cavity containing interdigitated Aluminum electrodes. When t ...

Elsevier2009

Bulk-source-coupled CMOS Quadrature Oscillators

Pierre-André Farine, Cyril Botteron, Uroschanit Yodprasit, Paul Saad

A quadrature oscillator based on a coupling between the bulk and the source of MOS transistors is proposed. Since the resonator load is not directly involved in the coupling process, the oscillation frequency is very close to the resonant frequency, hence ...

Institution of Engineering and Technology2009

A frequency-tunable impedance matching network based on coupled inductors for RF power amplifiers

Maher Kayal

In this paper we present an RF PA employing an output impedance matching network of the pi-type, where an inductor is variable. In order to implement this tunable inductor, the coupled-inductor technique [1] is used. Although other techniques for inductor ...

2008

Design methodology for CMOS distributed amplifiers

Catherine Dehollain

The design of distributed amplifiers in a CMOS process is investigated. In particular, the impact of parasitic elements from the transistors and from interstage inductors is studied. A methodology for determining an optimum design, including the number of ...

2008

RF power amplifier employing a frequency-tunable impedance matching network based on coupled inductors

Maher Kayal

Coupled inductors can be used as tunable inductances. Employing coupled inductors in the output impedance matching network of an RF power amplifier leads to superior performance when operating in more than one frequency band. As proof of this concept, the ...

2008

Design and fabrication of suspended-gate MOSFETs for MEMS resonator, switch and memory applications

Nicolas Abelé

Wireless communication systems and handset devices are showing a rapid growth in consumer and military applications. Applications using wireless communication standards such as personal connectivity devices (Bluetooth), mobile systems (GSM, UMTS, WCDMA) an ...

EPFL2007

Ultra-thin nanograin polysilicon devices for hybrid CMOS-NANO integrated circuits

Serge Ecoffey

The aim of this research is to develop and to evaluate devices and circuits performances based on ultrathin nanograin polysilicon wire (polySiNW) dedicated to room temperature operated hybrid CMOS-"nano" integrated circuits. The proposed polySiNW device is ...

EPFL2007

A hybrid CMOS-SET co-fabrication platform using nano-grain polysilicon wires

Mihai Adrian Ionescu, Didier Bouvet, Vincent Pott, Santanu Mahapatra, Serge Ecoffey

This paper presents a process for the co-fabrication of self-aligned NMOS and single electron transistors made by gated polysilicon wires. The realization of SET–MOS hybrid architectures is also reported. The proposed process exploits an original low energ ...

2005

Semiconductor device

Serguei Okhonin

A semiconductor device, such as a memory device or radiation detector, is disclosed, in which data storage cells are formed on a substrate. Each of the data storage cells includes a field effect transistor having a source, drain, and gate, and a body arran ...

2004