Aluminum Scandium Nitride as Piezoelectric Material for SAW/BAW Hybrid Resonators with Large Figure of Merit
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Piezoelectric thin films have existing and promising new applications in microwave filter technologies. The final performance depends on many parameters, and very specifically on the materials properties of each involved material. In this article, material ...
Radio frequency (RF) filters based on bulk acoustic wave resonances in piezoelectric thin films have become indispensable components in mobile communications. The currently used material, AlN, exhibits many excellent properties for this purpose. However, i ...
The development of wireless and mobile communication in the last decade led to the elaboration of new components based on thin films with continually increasing performance and reduced fabrication cost. A fundamental element for mobile communication is the ...
This paper reports on the microfabrication and characterization of piezoelectric MEMS structures based on epitaxial Pb(Zr0.2Ti0.8)O-3 (PZT) thin films grown on silicon wafers. Membranes and cantilevers are realized using a sequence of microfabrication proc ...
Thin Film Bulk Acoustic Wave Resonators (TFBARs) had been developed a decade ago and since then were implemented extensively in mobile communications devices. The "heart" of a TFBAR consists of a piezoelectric film that operates as an acousto-electric tran ...
The progress in the technology of microelectronic devices has led to a strong miniaturization and high performance for circuits and systems, enabling modern applications such as mobile computing and communications. Today, remaining "off-chip" components th ...
AlN films are employed in RF filters for wireless communication. We report on enhanced coupling factors k(t)(2) obtained by partial substitution of Al by Sc. Al0.88Sc0.12N films were deposited by reactive magnetron sputtering from an Al0.9Sc0.1 alloy targe ...
Today's consumer electronics based on a large variety of time-keeping and frequency reference applications is based on quartz-crystal oscillators, because of their excellent performances in terms of quality factor, thermal and frequency stability. However, ...
A novel concept for shear mode Bulk Acoustic Resonators (BAR) is presented. It is based on c-axis oriented AlN thin films grown on silicon dioxide thin films, combined with interdigitated electrodes. Such a structure leads to an excitation of mainly shear ...
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High-Q, bulk acoustic wave composite resonators based on a symmetric layer sequence Of SiO2-A1N-SiO2 sandwiched between electrodes have been developed. Acoustic isolation was achieved by means of deep silicon etching to obtain membrane type TFBAR's. Three ...
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