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Cryogenic MOSFET Modeling for Large-Scale Quantum Computing
Related publications (96)
Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing
Edoardo Charbon, Christian Enz, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico
This study presents the first in depth characterization of deep cryogenic electrical behavior of a commercial 16 nm CMOS FinFET technology. This technology is well suited for a broad range of applications, including quantum computing, quantum sensing, and ...
IEEE2021In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation
Edoardo Charbon, Christian Enz, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico
In this paper, the influence of temperature and back-gate bias is experimentally investigated on 22 nm FDSOI CMOS process. Cryogenic DC characterization was carried out under various back-gate voltages, V back , from 2.95 K back to 300 K. An abrupt drop-of ...
IEEE2021Characterization and Analysis of On-Chip Microwave Passive Components at Cryogenic Temperatures
Edoardo Charbon, Andrea Ruffino, Fabio Sebastiano
This paper presents the characterization and modeling of microwave passive components in TSMC 40-nm bulk CMOS, including metal-oxide-metal (MoM) capacitors, transformers, and resonators, at deep cryogenic temperatures (4.2 K). To extract the parameters of ...
2020Quantum Transport in 40-nm MOSFETs a Deep-Cryogenic Temperatures
Edoardo Charbon, Andrea Ruffino, Yatao Peng
In this letter, we characterize the electrical properties of commercial bulk 40-nm MOSFETs at room and deep cryogenic temperatures, with a focus on quantum information processing (QIP) applications. At 50 mK, the devices operate as classical FETs or quantu ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020Designing a DDS-Based SoC for High-Fidelity Multi-Qubit Control
Edoardo Charbon, Fabio Sebastiano
The design of a large-scale quantum computer requires co-optimization of both the quantum bits (qubits) and their control electronics. This work presents the first systematic design of such a controller to simultaneously and accurately manipulate the state ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures
Edoardo Charbon, Fabio Sebastiano
Cryogenic device models are essential for the reliable design of the cryo-CMOS electronic interface necessary to build future large-scale quantum computers. This paper reports the characterization of the drain-current mismatch of NMOS and PMOS devices fabr ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020Characterization and Modeling of Mismatch in Cryo-CMOS
Edoardo Charbon, Fabio Sebastiano
This paper presents a device matching study of a commercial 40-nm bulk CMOS technology operated at cryogenic temperatures. Transistor pairs and linear arrays, optimized for device matching, were characterized over the temperature range from 300 K down to 4 ...
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020Cryo-CMOS for Analog/Mixed-Signal Circuits and Systems
Edoardo Charbon, Fabio Sebastiano
CMOS circuits operating at cryogenic temperature (cryo-CMOS) are required in several low-temperature applications. A compelling example is the electronic interface for quantum processors, which must reside very close to the cryogenic quantum devices it ser ...
IEEE2020Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics
The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...
EPFL2019Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors
Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers
This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the derived limit saturates to a value that is independent of tempe ...
2019