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CMOS-Based Readout and Control Electronics for Microgrippers

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Integrated Electronics for Deep Implants to Remotely Monitor Hemodynamics

Mustafa Besirli

The integration of technology in the medical field has greatly improved accuracy in diagnoses, thus leading to more effective treatments. Wearable and implantable medical devices offer great potential for remote patient monitoring, particularly for heart f ...

EPFL2023

Positron emission tomography is a nuclear imaging technique well known for its use in oncology for cancer diagnosis and staging. A PET scanner is a complex machine which comprises photodetectors placed in a ring configuration that detect gamma photons gene ...

EPFL2023

Cryogenic CMOS Integrated Circuits for Scalable Readout of Silicon Quantum Computers

Andrea Ruffino

Quantum computing promises to revolutionize our lives, achieving unprecedented computational powers and unlocking new possibilities in drug discovery, chemical simulations and cryptography. The fundamental unit of computation of a quantum computer is the q ...

EPFL2021

Development of a Data Concentrator ASIC for the High Luminosity upgrade of the CMS Outer Tracker detector with tracking trigger

Simone Scarfì

With the increasing capabilities of the microelectronics technology, future particle detectors in high energy physics will be able to yield high-level features that are not only simple geometrical positions or energy measurement in the silicon sensors used ...

EPFL2021

Time-of-flight device and 3d optical detector

Christian Enz, Assim Boukhayma, Antonino Caizzone

A Time-of-flight optical device and a 3D optical detector comprising a CMOS integrated circuit with an array of photosensitive pixels that are, at least in part, interconnected to form macro-pixels (180). Each macro-pixel (180) groups a plurality of indivi ...

2020

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...

EPFL2019

A 512 x 512 SPAD Image Sensor With Integrated Gating for Widefield FLIM

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Arin Can Ülkü

In this paper, we report on SwissSPAD2, an image sensor with 512 x 512 photon-counting pixels, each comprising a single-photon avalanche diode (SPAD), a 1-b memory, and a gating mechanism capable of turning the SPAD ON and OFF, with a skew of 250 and 344 p ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

The designs fabrication and testing of low-cost readout electronics for piezoresistive MEMS-based transducers are presented in this paper. The proposed circuit architecture has a low input referred noise power spectral density of 60nV/root Hz a latency of ...

IEEE2019

Towards Oxide Electronics: a Roadmap

Ulf Anders Hagfeldt, Francisco Sanchez, Mauro Fanciulli, Monica Marcela Lira Cantu, Brahim Dkhil

At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the insurmountable barrier given by the ultimate atomic nature of ...

2019

Monolithic technology for silicon nanowires in high-topography architectures

Yusuf Leblebici, Mohammad Nasr Esfahani, Mustafa Yilmaz

Integration of silicon nanowires (Si NWs) in three-dimensional (3D) devices including integrated circuits (ICs) and microelectromechanical systems (MEMS) leads to enhanced functionality and performance in diverse applications. The immediate challenge to th ...

Elsevier2017