Heralded Spectroscopy Reveals Exciton-Exciton Correlations in Single Colloidal Quantum Dots
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Semiconductor quantum wires (QWRs) are promising structures for optoelectronics applications, since they can provide quantum confinement for charge carriers in two dimensions. The advantage that they offer over conventional quantum wells (QWs) is due to th ...
Exciton reflectivity from GaN/AlxGa1-xN quantum wells (QWs) shows broad peaks that are difficult to analyze within a conventional single-free-exciton model. We have applied a new formalism that allows us to separate numerically radiative and inhomogeneous ...
Photodissocn. of H2O (D2O) and Cl2 trapped in rare gas matrixes was studied in relation to the cage effect. Barrier energies for the exit of the fragments from the matrix cage were detd., together with the excess kinetic energy dependence of the photodisso ...
The formation mechanisms, structure and optoelectronic properties of Ga(In)As/(Al)GaAs quantum dot (QD) heterostructures grown by organometallic chemical vapor deposition on patterned (111)B GaAs substrates are reviewed. With this approach, it is possible ...
Dissocn. efficiencies for excitation of the repulsive A 1P state of HCl were recorded in Xe, Kr, and Ar matrixes for photon energies between 5 and 10 eV from the content of dissocn. products and quantum efficiencies were derived with the absorption spectra ...
It is shown that both GaN and Ga0.8In0.2N quantum dots (QDs) can be grown by molecular beam epitaxy on silicon or sapphire substrates making use of the strain-induced two-dimensional (2D)-three dimensional (3D) growth mode occurring for mismatched material ...
In this paper, we present a systematic study of the effect of growth parameters on the structural and optical properties of InAs quantum dot (QD) grown under Stranski-Krastanov mode by molecular beam epitaxy. The dot density is significantly reduced from 1 ...