High Permittivity Siloxanes as Promising Materials for Dielectric Elastomer Transducers: From Synthesis to Application
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Electrostatically driven MEMS devices commonly operate with electric fields as high at 108 V/m applied across the dielectric between electrodes. Even with the best mechanical design, the electrical design of these devices has a large impact both on perform ...
Institute of Electrical and Electronics Engineers2004
We investigate the dielectric screening across the Si-SiO2 interface using a first-principle approach. By determining the profile of the microscopic polarization and the effective polarizabilities of SiOn (n = 0,..4) structural units, we show that the vari ...
Quasi-amorphous BaTiO3 thin films (see Figure) represent a polar ionic solid without spatial periodicity. Most probably, polarity of the quasi-amorphous BaTiO3 is associated with directional ordering of crystal motifs formed in the steep temperature gradie ...
We introduce a variational total-energy functional to treat finite homogeneous electric fields with periodic boundary conditions and show that this functional can be implemented within a Car-Parrinello molecular dynamics scheme. The Coupling to an electric ...
Relaxor Pb(Sc-12/Ta-1/2)O-3 (PST) thin films have been prepared using mixed alkoxide and acetate precursors on TiO2/Pt/TiO2/SiO2/Si substrates. Relaxor behavior as evidenced by frequency dispersion of the permittivity as a function of temperature was obser ...
Using a density-functional approach, we study the dielectric permittivity across interfaces at the atomic scale. Focusing on the static and high-frequency permittivities of SiO2 films on silicon, for oxide thicknesses from 12 Angstrom down to the atomic sc ...
We address the dielectric constant (or the polarizability for an isolated system) as obtained in density-functional supercell calculations with a discrete k-point sampling. We compare a scheme based on conventional perturbational theory to one based on a d ...
The influence of addition of a low-loss linear dielectric material to a tunable ferroelectric material has been investigated in terms of the electrostatic consideration. The calculations of the dielectric loss and dielectric non-linearity of ferroelectric- ...
In this paper, the resistive and piezoresistive properties of a commercial resistive composition (Du Pont 2041), often used for strain-gauge applications, are examined on several dielectric compositions, which themselves are deposited onto various ceramic ...
For the first time this paper presents strip lines fabricated using SU-8 as the dielectric material. It shows the complete fabrication process of micromachined strip lines with a total height of 35.5 um as well as their characterization by on-wafer S-param ...