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A 4.7μW switched-bias MEMS microphone preamplifier for ultra-low-power voice interfaces

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IGCT Based Solid State Resonant Conversion

Dragan Stamenkovic

Driven by the environmental changes, penetration of renewables and the need for more flexible power grid, DC is reemerging as a basis for future power networks. Already established in the area of HVDC for very long distance transmission, more and more atte ...

EPFL2020

High voltage switch for compact bidirectional dc-dc converter driving dielectric electroactive polymer actuators

Yves Perriard, Yoan René Cyrille Civet, Morgan Almanza, Raphaël Johannes Charles Mottet, Lucas Pniak

Driving DEAs requires time-varying high voltage power supplies, up to 18kV for 200um polymer layers. HV amplifiers are commonly used but bulky and expensive. Designing embedded actuators requires compact and efficient powersupplies. Furthermore, only a lit ...

2019

This paper presents the digital implementation of a boundary controller with unipolar switching characteristic for single-phase voltage source full-bridge inverters. This paper expands the application of a second-order switching surface-based control metho ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

An input-series/output-series converter dedicated to high power applications is presented. The converter is composed of plural MF transformers based on DC-DC sub-converters. The series connection allows reaching input-voltage levels in the range of several ...

Ieee2016

A remotely powered fully integrated low power class-E power amplifier for implantable sensor systems

Catherine Dehollain, Enver Gürhan Kilinç, Kerim Türe

This paper presents a fully integrated low power class-E power amplifier and its integration to remotely powered sensor system. The on-chip 1.2 GHz power amplifier is implemented in 0.18 A mu m CMOS process with 0.2 V supply. The implantable system is powe ...

Springer2016

A new isolated DC-DC converter is presented suited for high voltage applications. It is based on the series connection of NPC inverter cells, using semiconductor devices with lower voltage blocking capability than the total input voltage. The galvanic isol ...

2015

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This paper presents a low power fully integrated class-E power amplifier and its integration with remotely powered sensor system. The class-E power amplifier is suitable solution for low-power applications due to its high power efficiency. However, the req ...

Spie-Int Soc Optical Engineering2015

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A 2.4 GHz low power polar transmitter is proposed in this paper. A dynamic biasing circuit, controlled by a digital envelope signal, is used as a direct digital-to-RF envelope converter. It effectively linearizes the input-output characteristic of the over ...

Springer Verlag2014

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A 2.4-GHz low power polar transmitter architecture is proposed in this paper. A dynamic biasing circuit, controlled by a digital envelope signal, is used to linearize the input-output characteristic of the overdriven class-C power amplifier. A model of the ...

2013

On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Nilay Dagtekin

Tunnel FETs (TFETs) are being intensively investigated for their potential in achieving subthermal switching slopes and extremely low leakage currents. Recently, a promising concept has been proposed: the electron-hole bilayer TFET (EHBTFET), which exploit ...

Ieee-Inst Electrical Electronics Engineers Inc2012