Publication
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics
Related publications (41)
On the boundedness of n-folds with κ(X) = n - 1
In this note, we study certain sufficient conditions for a set of minimal klt pairs ( X, triangle) with kappa ( X, triangle) = dim( X ) - 1 to be bounded. ...
European Mathematical Soc-Ems2024The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells
Thomas Fjord Kjaersgaard Weatherley
Today's world depends on optoelectronic devices: light-emitting diodes illuminate our houses and backlight the displays on our gadgets, while laser diodes underpin fibre-optic communication. Such optoelectronic devices rely on crystalline semiconductor het ...
EPFL2023Semiconductor-based device architectures in multimaterial fibers
William Nicolas Duncan Esposito
Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...
EPFL2023Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch
Anna Fontcuberta i Morral, Lucas Güniat, Didem Dede, Valerio Piazza, Elif Nur Dayi, Martin George Friedl, Vladimir Dubrovskii, Nicholas Paul Morgan, Akshay Balgarkashi
Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...
IOP Publishing Ltd2022Crystalline Order in Compound Semiconductors in Nanoscale Structures and Thin Films
Semiconductors materials and devices are essential building blocks for many of the technologies deeply embedded in modern life. Improving the performance of semiconductor devices requires a deeper understanding of the fundamental mechanisms controlling the ...
EPFL2021III-nitride photonic cavities
Nicolas Grandjean, Raphaël Butté
Owing to their wide direct bandgap tenability, III-nitride (III-N) compound semiconductors have been proven instrumental in the development of blue light-emitting diodes that led to the so-called solid-state lighting revolution and blue laser diodes that a ...
WALTER DE GRUYTER GMBH2020Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices
Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...
EPFL2020GaAs nanoscale membranes: prospects for seamless integration of III-Vs on silicon
Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Luca Francaviglia, Vladimir Dubrovskii, Nicholas Paul Morgan, Sara Marti Sanchez, Andres Maria Raya Bejarano
The growth of compound semiconductors on silicon has been widely sought after for decades, but reliable methods for defect-free combination of these materials have remained elusive. Recently, interconnected GaAs nanoscale membranes have been used as templa ...
2020Alignment of energy levels in amorphous oxides and at semiconductor-water interfaces
We conduct a detailed investigation of defects in two representative amorphous oxides: amorphous Al2O3 (am-Al2O3) and TiO2 (am-TiO2), by combining ab initio molecular dynamics (MD) simulations and hybrid functional calculations. Our results indicate that o ...
EPFL2019EPFL Library Research Data Management Fastguides
Francesco Varrato, Antoine Louis Claude Masson, Eliane Ninfa Blumer, Sitthida Samath, Fantin Reichler, Jérôme Julien Chaptinel
This is a set of 11 1-sheet guides, providing abridged notions, advice and references for quick and practical research data management: #01 Research Data: the basics #02 FAIR Data Principles #03 Cost of Research Data Management #04 File Formats #05 Metadat ...
2019