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Recent results with radiation-tolerant TowerJazz 180 nm MALTA sensors

Related publications (39)

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High Spectral Resolution Plasmonic Color Filters with Subwavelength Dimensions

Giulia Tagliabue

Rapid advances in image sensor technology have generated a mismatch between the small size of image sensor pixels and the achievable filter spectral resolution. This mismatch has prevented the realization of chip-based image sensors with simultaneously hig ...

2019

Radiation enhanced oxidation of proton-irradiated copper thin-films: Towards a new concept of ultra-high radiation dosimetry

Jean-Michel Sallese, Didier Bouvet, Georgi Gorine, Federico Ravotti

The effects of extreme radiation levels on the electrical resistivity of metal thin films made of copper were studied by means of electrical measurements and post irradiation imaging. Different 3x3 mm(2) chips were produced by depositing 500 nm of meander ...

AMER INST PHYSICS2019

A 30-frames/s, 252 x 144 SPAD Flash LiDAR With 1728 Dual-Clock 48.8-ps TDCs, and Pixel-Wise Integrated Histogramming

Edoardo Charbon, Ivan Michel Antolovic, Chunmin Zhang, Scott Anthony Lindner, Juan Mata Pavia, Martin Wolf

A 252 x 144 single-photon avalanche diode (SPAD) pixel sensor, called Ocelot, is reported for light detection and ranging (LiDAR). The sensor, fabricated in the 180-nm CMOS technology, features 1728 12-bit time-to-digital converters (TDCs) with 48.8-ps res ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Oxygenation is an important marker in many clinical settings, e.g. diagnosing ischaemic brain injuries in preterm infants or determining treatment effectiveness in cancer patients. Despite significant efforts to determine the oxygenation state of the human ...

EPFL2018

Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

Jacopo Bronuzzi

This thesis aims at demonstrating a novel technique for the characterization of interfaces obtained by a CMOS-compatible Surface Activated Bonding (SAB) process between silicon wafers. This enables the optimization of the two main components of monolithic ...

EPFL2018

Development of the scintillating fibre tracker technology for the LHCb upgrade and the LHC beam profile monitoring system

Olivier Göran Girard

The LHCb detector located at the large hadron collider (LHC) at CERN will undergo a major upgrade in 2019-2020. The detector will be prepared to operate at an increased instantaneous luminosity and to read out full events at 40MHz. This requires many chang ...

EPFL2018

1GigaRad TID impact on 28 nm HEP analog circuits

Christian Enz

An in-depth analysis of modern technologies could represent the base for the success of the High Luminosity Large Hadron Collider experiments. The requirement is a new reliable electronics in 1Grad-TID environments. For the purpose, single devices in TSMC ...

ELSEVIER SCIENCE BV2018

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The goal of this paper is to introduce CMOS-based single-photon detectors in terms of technology and applications. We cover background and recent progress on the detectors and describe emerging applications based on the technology. ...

IEEE2018

Low frequency THz radiation is visualized by means of a charged-coupled device designed for optical frequencies and a CMOS sensor. This technological advance opens novel opportunities in THz imaging as it offers smallest pixel size and large chip size at l ...

Ieee2016

Ultra Low Noise CMOS Image Sensors

Assim Boukhayma

CMOS Image Sensors (CIS) overtook the charge coupled devices (CCDs) in low noise performance. Photoelectron counting capability is the next step for CIS for ultimate low light performance and new imaging paradigms. This work presents a review of CMOS image ...

EPFL2016