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Computational Imaging SPAD Cameras

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A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

This article introduces a modular, direct time-of-flight (TOF) depth sensor. Each module is digitally synthesized and features a 2

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8) single-photon avalanche diode (SPAD) pixel array, an edge-sensitive decision tree, a shared time-to ...

2019

Low-Cost Readout Electronics for Piezoresistive MEMS-Based Transducers

Marco Mattavelli, Diego Ruben Barrettino

The designs fabrication and testing of low-cost readout electronics for piezoresistive MEMS-based transducers are presented in this paper. The proposed circuit architecture has a low input referred noise power spectral density of 60nV/root Hz a latency of ...

IEEE2019

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A 252 x 144 single-photon avalanche diode (SPAD) pixel sensor, called Ocelot, is reported for light detection and ranging (LiDAR). The sensor, fabricated in the 180-nm CMOS technology, features 1728 12-bit time-to-digital converters (TDCs) with 48.8-ps res ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Time-resolved Single-photon Detector Arrays for High Resolution Near-infrared Optical Tomography

Scott Anthony Lindner

Oxygenation is an important marker in many clinical settings, e.g. diagnosing ischaemic brain injuries in preterm infants or determining treatment effectiveness in cancer patients. Despite significant efforts to determine the oxygenation state of the human ...

EPFL2018

A time-gated large-array SPAD camera for picosecond resolution real-time FLIM

Edoardo Charbon, Claudio Bruschini, Arin Can Ülkü

Single-photon avalanche diode (SPAD) arrays have recently emerged as promising detectors for many wide-field fluorescence lifetime imaging microscopy (FLIM) applications, thanks to their picosecond range temporal resolution, single-photon sensitivity and f ...

2018

3D-Stacked CMOS SPAD Image Sensors: Technology and Applications

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee

3Dstacked CMOS SPAD based image sensors hold the promise for better sensitivity and more functionality per pixel. The technology enables to separate detection from computation onto different chips, or tiers, that are stacked onto one another. One advantage ...

IEEE2018

Ultra Low Noise CMOS Image Sensors

Assim Boukhayma

CMOS Image Sensors (CIS) overtook the charge coupled devices (CCDs) in low noise performance. Photoelectron counting capability is the next step for CIS for ultimate low light performance and new imaging paradigms. This work presents a review of CMOS image ...

EPFL2016

Anomalous visualization of sub-2 THz radiation on silicon- based CMOS and CCD sensors

Christoph Peter Hauri

Low frequency THz radiation is visualized on common optically-designed CCD and CMOS sensors. The CCD/CMOS technology offers smallest pixel size, large chip, very cheap cost, insensitivity to background noise, and multispectral detection. ...

Ieee2016

This paper presents an overview of the read noise in CMOS image sensors (CISs) based on four-transistors (4T) pixels, column-level amplification and correlated multiple sampling. Starting from the input-referred noise analytical formula, process level opti ...

Mdpi Ag2016

New advances in the field of image sensors (especially in CMOS technology) tend to question the conventional methods used to acquire the image. Compressive Sensing (CS) plays a major role in this, especially to unclog the Analog to Digital Converters which ...

EPFL2015

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

This article introduces a modular, direct time-of-flight (TOF) depth sensor. Each module is digitally synthesized and features a 2

\times

\times

8) single-photon avalanche diode (SPAD) pixel array, an edge-sensitive decision tree, a shared time-to ...

2019