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New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

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Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...

EPFL2019

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Riyaz Mohammed Abdul Khadar, Mehdi Naamoun

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

2019

IGCT Low-Current Switching – TCAD and Experimental Characterization

Drazen Dujic, Dragan Stamenkovic

Utilization of the Integrated Gate Commutated Thyristor as a semiconductor switch in the Series Resonant Converter for isolated medium voltage DC-DC conversion offers an opportunity for high conversion efficiency while operating at the high switching frequ ...

2019

A 0.5 V 2.5 mu W/MHz Microcontroller with Analog-Assisted Adaptive Body Bias PVT Compensation with 3.13 nW/kB SRAM Retention in 55 nm Deeply-Depleted Channel CMOS

Andreas Peter Burg, David Ruffieux

Microcontroller systems operating at low supply voltage in near- or sub-threshold regime suffer both from increased effects of PVT (Process, Voltage, Temperature) variation and from a larger share of leakage on overall power due to the reduced frequency. W ...

IEEE2019

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We report on the control of the crystal phase of micron-sized planar III-V semiconductor films grown on top of standard (001) oriented substrates. We achieve this by confining the MOCVD process using SiO2 templates and selecting specific growth planes. We ...

IEEE2019

Towards Oxide Electronics: a Roadmap

Ulf Anders Hagfeldt, Francisco Sanchez, Mauro Fanciulli, Monica Marcela Lira Cantu, Brahim Dkhil

At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the insurmountable barrier given by the ultimate atomic nature of ...

2019

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon

Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the po ...

2018

The present invention relates, for example, to a semiconductor structure containing multiple parallel channels in which several parallel conductive channels are formed within the semiconductor structure. Electric contact or electrostatic control over all t ...

2018

The present invention relates to a Semiconductor device including a first electrode, a second electrode and at least one semiconductor material or layer between the first and second electrode. The semiconductor device further includes at least one field pl ...

2018

The absorption of multiple photons when there is no resonant intermediate state is a well-known nonlinear process in atomic vapours, dyes and semiconductors. The N-photon absorption (NPA) rate for donors in semiconductors scales proportionally from hydroge ...

NATURE PUBLISHING GROUP2018