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Optimization of Edge Profile for Improved Anti-Resonance Quality Factor in Lithium Niobate SH0 Resonators

Related publications (70)

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3.4 GHz composite thin film bulk acoustic wave resonator for miniaturized atomic clocks

Paul Muralt, Alvaro Artieda

Triple layer SiO2/AlN/SiO2 composite thin film bulk acoustic wave resonators (TFBARs) were studied for applications in atomic clocks. The TFBAR's were tuned to 3.4 GHz, corresponding to half the hyperfine splitting of the ground state of rubidium Rb-87 ato ...

American Institute of Physics2011

The Vibrating Body Transistor

Mihai Adrian Ionescu, Daniel Grogg

This paper presents a hybrid resonator architecture called the vibrating body field-effect transistor (VB-FET), which combines a silicon microelectromechanical (MEM) resonator and a FET in a single device. The active device provides improved motion sensing ...

2011

AIN Thin Film Structures for High-Q Resonators

Alvaro Artieda

The development of wireless and mobile communication in the last decade led to the elaboration of new components based on thin films with continually increasing performance and reduced fabrication cost. A fundamental element for mobile communication is the ...

EPFL2010

Epitaxial piezoelectric MEMS on silicon

Nico de Rooij, Danick Briand, Pattanaphong Janphuang, Don Isarakorn

This paper reports on the microfabrication and characterization of piezoelectric MEMS structures based on epitaxial Pb(Zr0.2Ti0.8)O-3 (PZT) thin films grown on silicon wafers. Membranes and cantilevers are realized using a sequence of microfabrication proc ...

Institute of Physics2010

Resonant-Body Fin-FETs with sub-nW power consumption

Mihai Adrian Ionescu, Andrea Lovera, Dimitrios Tsamados, Daniel Grogg, Sebastian Thimotee Bartsch

This paper presents, for the first time, experimental evidence on resonant-body Fin-FETs (RB-FinFET) with two independent lateral gates, operated from weak to strong inversion, which enables unique trade-off between power consumption and gain. Resonance fr ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2010

Active Microelectromechanical Resonator

Daniel Grogg

The progress in the technology of microelectronic devices has led to a strong miniaturization and high performance for circuits and systems, enabling modern applications such as mobile computing and communications. Today, remaining "off-chip" components th ...

EPFL2010

Piezoelectric resonator operating in thickness shear mode

Paul Muralt, Evgeny Milyutin

An acoustic wave resonator device comprising a resonant layer that comprises a series of side-by-side areas of first and second dielectric materials. In one embodiment the first dielectric material is a piezoelectric, in particular the first dielectric mat ...

2010

Finite element analysis and experiments on a silicon membrane actuated by an epitaxial PZT thin film for localized-mass sensing applications

Nico de Rooij, Danick Briand, Don Isarakorn

In this paper, we investigate the performance of a piezoelectric membrane actuated by an epitaxial piezoelectric Pb(Zr0.2Ti0.8)O-3 (PZT) thin film for localized-mass sensing applications. The fabrication and characterization of piezoelectric circular membr ...

Elsevier2010

Parallel optical readout of cantilever arrays in dynamic mode

Peter Vettiger

Parallel frequency readout of an array of cantilevers is demonstrated using optical beam deflection with a single laser-diode pair. Multi-frequency addressing makes the individual nanomechanical response of each cantilever distinguishable within the receiv ...

Institute of Physics2010

Nanogap MEM resonators on SOI

Nicoleta-Diana Ciressan

Today's consumer electronics based on a large variety of time-keeping and frequency reference applications is based on quartz-crystal oscillators, because of their excellent performances in terms of quality factor, thermal and frequency stability. However, ...

EPFL2009