Optimization of Edge Profile for Improved Anti-Resonance Quality Factor in Lithium Niobate SH0 Resonators
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An acoustic wave resonator device comprising a resonant layer that comprises a series of side-by-side areas of first and second dielectric materials. In one embodiment the first dielectric material is a piezoelectric, in particular the first dielectric mat ...
The progress in the technology of microelectronic devices has led to a strong miniaturization and high performance for circuits and systems, enabling modern applications such as mobile computing and communications. Today, remaining "off-chip" components th ...
In this paper, we investigate the performance of a piezoelectric membrane actuated by an epitaxial piezoelectric Pb(Zr0.2Ti0.8)O-3 (PZT) thin film for localized-mass sensing applications. The fabrication and characterization of piezoelectric circular membr ...
Parallel frequency readout of an array of cantilevers is demonstrated using optical beam deflection with a single laser-diode pair. Multi-frequency addressing makes the individual nanomechanical response of each cantilever distinguishable within the receiv ...
This paper presents, for the first time, experimental evidence on resonant-body Fin-FETs (RB-FinFET) with two independent lateral gates, operated from weak to strong inversion, which enables unique trade-off between power consumption and gain. Resonance fr ...
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Today's consumer electronics based on a large variety of time-keeping and frequency reference applications is based on quartz-crystal oscillators, because of their excellent performances in terms of quality factor, thermal and frequency stability. However, ...
Triple layer SiO2/AlN/SiO2 composite thin film bulk acoustic wave resonators (TFBARs) were studied for applications in atomic clocks. The TFBAR's were tuned to 3.4 GHz, corresponding to half the hyperfine splitting of the ground state of rubidium Rb-87 ato ...
This paper reports on the microfabrication and characterization of piezoelectric MEMS structures based on epitaxial Pb(Zr0.2Ti0.8)O-3 (PZT) thin films grown on silicon wafers. Membranes and cantilevers are realized using a sequence of microfabrication proc ...
This paper presents a hybrid resonator architecture called the vibrating body field-effect transistor (VB-FET), which combines a silicon microelectromechanical (MEM) resonator and a FET in a single device. The active device provides improved motion sensing ...
The development of wireless and mobile communication in the last decade led to the elaboration of new components based on thin films with continually increasing performance and reduced fabrication cost. A fundamental element for mobile communication is the ...