From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE
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Thermally detected optical absorption measurements have been performed at liquid helium temperature in order to study the effects of In segregation on the optical properties of InxGa1-xAs/GaAs quantum wells grown by molecular-beam epitaxy under various gro ...
A Hall mobility as high as 176,200 cm2V-1s-1 at 77 K with N(d)-N(a) = 1.3 x 10(14) cm-3 has been obtained by adjusting the substrate and the phosphine cracker temperatures. The 2 K photoluminescence spectra show finely resolved excitonic transitions for la ...
When InP is grown by chemical beam epitaxy on substrates patterned with ridges oriented along [110] with (111)B sidewall planes, the migration of In species on the surface changes direction with growth temperature. The movement is from the ridge to the val ...
We have studied the effect of growth interruptions on 2-monolayers-thick InAs/InP strained quantum wells (QW) grown by chemical beam epitaxy. The main feature is the formation of up to 8-monolayers-thick InAs islands during As2 annealing of the QW. Their f ...
We report the growth behaviour of InP, InGaAs and InGaAsP on non-planar InP substrates where ridges were formed with (111)A, (211)A, (111)B and (551BAR) sidewall planes. All three materials grow uniformly on the whole patterned surface with (111)A and (211 ...
