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GeSn as next-generation material for short-wave infrared single-photon detection

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Advanced Silicon and SWIR Single-Photon Avalanche Diodes: Design, Simulation, and Characterization

Ekin Kizilkan

Low-level light detection with high spatial and timing accuracy is a growing area of interest by virtue of applications such as light detection and ranging (LiDAR), biomedical imaging, time-resolved Raman spectroscopy, and quantum applications. Single-phot ...

EPFL2024

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Semiconductor-based device architectures in multimaterial fibers

William Nicolas Duncan Esposito

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

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Lignin hydrogenolysis is a key step in the sustainable production of renewable bio-based chemicals and fuels. Heterogeneous metal catalysts have led to high yields but they rapidly deactivate, notably due to nanoparticle sintering and carbonaceous deposit ...

WILEY-V C H VERLAG GMBH2023

X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate

Sylvain Dunand, Mikaël Martino, Luca Massimiliano Antognini, Matthew James Large

Hydrogenated amorphous silicon (a-Si:H) is a well known material for its radiation resistance and for the possibility of deposition on flexible substrates like Polyimide (PI), polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). Due to the p ...

IEEE2023

Sub-10 ps Minimum Ionizing Particle Detection With Geiger-Mode APDs

Edoardo Charbon, Claudio Bruschini, Emanuele Ripiccini, Ming-Lo Wu, Francesco Gramuglia, Carlo Alberto Fenoglio

Major advances in silicon pixel detectors, with outstanding timing performance, have recently attracted significant attention in the community. In this work we present and discuss the use of state-of-the-art Geiger-mode APDs, also known as single-photon av ...

FRONTIERS MEDIA SA2022

Crystalline Order in Compound Semiconductors in Nanoscale Structures and Thin Films

Mahdi Zamani

Semiconductors materials and devices are essential building blocks for many of the technologies deeply embedded in modern life. Improving the performance of semiconductor devices requires a deeper understanding of the fundamental mechanisms controlling the ...

EPFL2021

Laser soliton microcombs heterogeneously integrated on silicon

Tobias Kippenberg, Rui Ning Wang, Junqiu Liu, Wenle Weng, Zeyu Zhang, Chao Xiang, Zeyu Zhang

Silicon photonics enables wafer-scale integration of optical functionalities on chip. Silicon-based laser frequency combs can provide integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent light detection ...

AMER ASSOC ADVANCEMENT SCIENCE2021

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

EPFL2021

Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices

Philipp Staudinger

Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...

EPFL2020