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Front-End Circuits for Radiation-Hard Monolithic CMOS Sensors targeting High-Energy Physics Applications

Related publications (45)

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Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...

EPFL2019

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Fabien Patrick Wildhaber, Junrui Zhang, Maneesha Rupakula, Francesco Bellando, Clarissa Convertino

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favor the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfac ...

IEEE2019

A low-voltage CMOS-compatible time-domain photodetector, device & front end electronics

Denis Sallin

During the last decades, the usage of silicon photodetectors, both as stand-alone sensor or integrated in arrays, grew tremendously. They are now found in almost any application and any market range, from leisure products to high-end scientific apparatuses ...

EPFL2016

A Low-Voltage Radiation-Hardened 13T SRAM Bitcell for Ultralow Power Space Applications

Adam Shmuel Teman, Robert Giterman, Pascal Andreas Meinerzhagen

Continuous transistor scaling, coupled with the growing demand for low-voltage, low-power applications, increases the susceptibility of VLSI circuits to soft-errors, especially when exposed to extreme environmental conditions, such as those encountered by ...

Institute of Electrical and Electronics Engineers2016

Substantial downscaling of the feature size in current CMOS technology has confronted digital designers with serious challenges including short channel effect and high amount of leakage power. To address these problems, emerging nano-devices, e.g., Silicon ...

EPFL2016

Ultra Low Noise CMOS Image Sensors

Assim Boukhayma

CMOS Image Sensors (CIS) overtook the charge coupled devices (CCDs) in low noise performance. Photoelectron counting capability is the next step for CIS for ultimate low light performance and new imaging paradigms. This work presents a review of CMOS image ...

EPFL2016

Polarity Control at Runtime

Michele De Marchi

Semiconductor device research for digital circuit design is currently facing increasing challenges to enhance miniaturization and performance. A huge economic push and the interest in novel applications are stimulating the development of new pathways to ov ...

EPFL2015

Microchannel liquid cooling has been proposed since the late 2000s as a viable enabler for 3D integration of microprocessors to continue scaling of computing power in the face of increasingly reduced returns from CMOS technology scaling. Thermal and electr ...

ACM/IEEE Press2015

Design and Implementation of CMOS Image Sensors for Biomedical Applications

Gözen Köklü

Since the first introduction of digital cameras, the camera market has been taking tremendous interest from many fields. This trend has even accelerated when the cost, size, and power consumption of such devices were reduced with the introduction of camera ...

EPFL2014

Resolving the Memory Bottleneck for Single Supply Near-Threshold Computing

David Atienza Alonso, Mohamed Mostafa Sabry Aly

This paper focuses on a review of state-of-the-art memory designs and new design methods for near-threshold computing (NTC). In particular, it presents new ways to design reliable low-voltage NTC memories cost-effectively by reusing available cell librarie ...

IEEE/ACM Press2014