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Aptamer-field-effect transistors for small-molecule sensing in complex environments

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Surface Charge Boundary Condition Often Misused in CO2 Reduction Models

Sophia Haussener, Etienne Boutin, Evan Fair Johnson

The Poisson-Nernst-Planck equations have been used to model species transport in electrochemical CO2 reduction, where the surface charge boundary condition accounts for the potential drop across the Stern layer. A direct comparison of the published models ...

AMER CHEMICAL SOC2023

Polymeric integration of structure-switching aptamers on transistors for histamine sensing

Nako Nakatsuka, Mattia Petrelli

Aptamers that undergo large conformational rearrangements at the surface of electrolyte-gated field-effect transistor (EG-FETs)-based biosensors can overcome the Debye length limitation in physiological high ionic strength environments. For the sensitive d ...

2023

Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation

Mihai Adrian Ionescu, Yann Christophe Sprunger, Aristea Grammoustianou, Luca Capua, Felix Risch, Ron Gill

We present a CMOS-compatible double gate and label-free C-reactive protein (CRP) sensor, based on silicon on insulator (SOI) silicon nanowires arrays. We exploit a reference subtracted detection method and a super-Nernstian internal amplification given by ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Multi-channel nanowire devices for efficient power conversion

Elison de Nazareth Matioli, Vasiliki Tileli, Tzu-Hsien Shen

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

NATURE RESEARCH2021

Nowadays, there is a high demand for sensitive and selective real-time analytical methods suitable for a wide range of applications, from personalized telemedicine, drug discovery, food safety, and quality control, to defense, security, as well as environm ...

2021

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InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

Microscopic Detection Analysis of Single Molecules in MoS2 Membrane Nanopores

Aleksandra Radenovic, Michael Graf

A systematic microscopic analysis of the various resistive effects involved in the electronic detection of single biomolecules in a nanopore of a MoS2 nanoribbon is presented. The variations of the transverse electronic current along the two-dimensional (2 ...

2020

Double-gate field-effect-transistor based biosensor

Hoël Maxime Guérin

The present invention concerns a biosensor (1) comprising: a source element (13); a drain element (17); a semiconductor channel element between the source element (13) and the drain element (17) for forming an electrically conductive channel with adjustabl ...

2019

Template-assisted grown III-V semiconductor nanowires: A transmission electron microscopy study

Nicolas Bologna

III-V semiconductor nanowires are, due to their unique properties, one of the most promising nanostructures developed in the last decades. However, the realization of commercial devices made of III-V nanowires, such as transistors and solar cells, has not ...

EPFL2019

Silicon Nanowires for Biosensing

Giovanni De Micheli, Sandro Carrara, Francesca Puppo

Over the past 20 years, nanomaterials, such as quantum dots, nanoparticles, nanowires(NWs), nanotubes, and graphene, have received enormous attention due to their suitable properties for designing novel nanoscale biosensors. Nanomaterials are very small st ...

Elsevier2018