Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
For the past couple of decades the desire to add more complexity to a computer chip, while simultaneously reducing the cost per bit, has been accommodated by down-scaling. This approach has been extremely successful in the past, but like all good things it ...
Current digital camera sensors are inherently sensitive to the near-infrared part of the spectrum. To prevent the near-IR contamination of images, an IR blocking filter (hot mirror) is placed in front of the sensor. In this work, we start by replacing the ...
Silicon is an excellent detector material for electromagnetic radiation in the wavelength range of 0.1 to 1000 nm. In the visible spectral range (400-700 nm), external quantum efficiencies approaching 100% are obtained. When combined with the amazing minia ...
This paper presents the design, fabrication and measurement results of a vertically moving, electrostatically actuated micromirror. The single crystalline silicon substrate allows the design of a symmetrical and mechanically stable mirror suspension while ...
This paper presents continuative results on the design, fabrication and measurements of a vertically moving, electrostatically actuated micromirror, first shown at the IEEE MEMS 2007 [N. Quack, I. Züst, S. Blunier, J. Dual, M. Arnold, F. Felder, M. Rahim, ...
This project has demonstrated the feasibility of a low-cost Earth sensor based on imaging oxygen airglow, allowing 0.4° accuracy from GEO under any illumination condition. Available Earth Sensor (ES) are based on the measurement of the earth’s infrared rad ...
We report on the first implementation of a single photon avalanche diode (SPAD) in 130 nm complementary metal–oxide–semiconductor (CMOS) technology. The SPAD is fabricated as p+/n-well junction with octagonal shape. A guard ring of p-well around the p+ anod ...
Detection of scintillation light from LSO (Lutetiumoxyorthosilicate) crystals used in positron emission tomography (PET) is traditionally based on photo- multipliers. The proposal is to develop a novel photo- sensor, which is based on vertically integratin ...
In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order Delta-sigma modul ...
A record 730 nm parametric conversion in silica fiber from the near-infrared to the short-wave infrared band is reported and analyzed. A parametric gain in excess of 30 dB was measured for a signal at 1300 nm (with corresponding idler at 2030 nm). This con ...
